Amorphous silicon-nitride thin films a-Si:N:H were obtained by plasma enhanced chemical vapour deposition (PECVD) method from SiH₄+NH₃ at 13.56 MHz. The process parameters were chosen to obtain the films of properties suitable for optoelectronic and mechanical applications. FTIR analysis of a-Si:N:H films indicated the presence of numerous hydrogen bonds (Si-H and N-H) which passivate structural defects in multicrystalline silicon and react with impurities. The morphological investigations show that the films are homogeneous. The deposition of a-Si:N:H layers leads to the decrease in friction coefficient of used substrates. Optical properties were optimised to obtain the films of low effective reflectivity, large energy gap Eg from 2.4 to 2.9 eV and refractive index in the range of 1.9 to 2.2. Reduction of friction coefficient for monocrystalline silicon after covering with a-Si:N:H films was observed: from 0.25 to 0.18 for 500 cycles.
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In this work, the authors compared the properties of multicrystalline silicon solar cells which depended on the kind of following antireflective layers: a-Si:C:H, a-Si:N:H and TiOx. Current-voltage characteristics for multicrystalline silicon solar cells were measured by the use of a computer controlled global spectrum sun simulator under an AM 1.5. The measurements of I-V characteristics allow the determination of basic electrical parameters and efficiency using the double exponential relationship from a two-diode solar cells model. Two key parameters: refractive index and thickness of the film affect the final features of the antireflective coating. Optimisation of these parameters and afterwards the experimental verification lead to the minimalisation of the reflection coefficient that decides about the quality of the antireflective layer. A high quality reflective layer can improve the efficiency of the solar cell even by 30%.
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