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Epitaxial films of GaInPAsSb quinary solid solutions

Kuznetsov V. V., Rubtsov E. R., Kognovitskaya E. A.

Materials Science Poland

2006

Vol. 24, No. 4

1057--1066

The method of the obtaining quinary solid solutions on the basis of A IIIBV compounds (GalnPAsSb) with specified properties was developed. New GaInPAsSb/GaSb, GalnPAsSb/InAs heterostructures were obtained to create optoelectronic devices for the 2-5 urn spectral range. The broken-gap type II hetero junction was formed at the InAs/Ga0.92In 0.08P0.05As0.08Sb0.87 heterostructure, and a light-emitting diode was fabricated with the emission intensity maximum at 1.9 žm.