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Peculiarities of neutron interaction with boron containing semiconductors

Didyk A. Y., Hofman A., Szteke W., Hajewska E., Vlasukova L. A.

Nukleonika

2009

Vol. 54, No. 3

163-168

Abstract. The results of point defect creation calculation in B4C, BN and BP semiconductor single crystals irradiated in the fast neutron reactor IBR-2 are presented. It has been shown that during the thermal neutron interaction with light isotope boron atoms (10B) the damage creation by means of fission nuclear reaction fragments (alfa-particles and 7Li recoil nuclei) exceeds the damage created by fast neutrons (En greater than 0.1 MeV) by more than two orders of value. It has been concluded that such irradiation can create a well developed radiation defect structure in boron-containing crystals with nearly homogeneous vacancy depth distribution. This may be used in technological applications for more effective diffusion of impurities implanted at low energies or deposited onto the semiconductor surface. The developed homogeneous vacancy structure is very suitable for the radiation enhanced diffusion of electrically charged or neutral impurities from the surface into the technological depth of semiconductor devices under post irradiation treatment.