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Synthesis and characterization of small size fluorescent LEEH caped blue emission ZnTe quantum dots

Patnaik S. K., Triapthy S. K., Sahu S. N.

Materials Science Poland

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2017

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Vol. 35, No. 1

1--5

EN

We report here for the first time the synthesis of LEEH caped very small size (2 nm) ZnTe quantum dots at low temperature (less than 100 °C) using a simple chemical route. The effects of aging and stirring time on the absorption spectra of the quantum dots were investigated. The synthesized nanocrystal (NC) was characterized by PL, TEM, XRD and the formation of very small size quantum dots having FCC structure was confirmed. Further, blue emission from the prepared sample was observed during exposure to monochromatic UV radiation. ZnTe NCs obtained in this study were found to be more stable compared to those presented in literature reports. ZnTe NCs may be considered as a new material in place of CdTe for optoelectronics devices.

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Sensing application of an optical fiber dip coated with L-Cystein ethyl ester hydrochloride capped ZnTe quantum dots

Sundaray M., Das C., Tripathy S. K.

Materials Science Poland

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2016

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Vol. 34, No. 3

665--668

EN

Optical fiber in conjunction with ZnTe quantum dots (QDs) is investigated for sensing application. ZnTe QDs, are synthesized by a simple chemical bottom up approach. Quantum dots are capped with L-Cystein ethyl ester hydrochloride (LEEH), to increase their stability. Then LEEH capped ZnTe QDs, whose size is estimated as 2.29 nm by effective mass approximation (EMA), are dip-coated on a cladding removed optical fiber. Different concentrations of alcohol and ammonia are used to investigate the sensing behavior. It is found that sensitivity of the sensor increases with the use of QDs for both alcohol and ammonia.

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Raman spectroscopy of CdTe/ZnTe quantum dot structures

Zielony E, Placzek-Popko E, Kamyczek P, Henrykowski A, Karczewski G

Optica Applicata

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2013

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Vol. 43, nr 1

181--185

EN

Semiconductor low-dimensional structures of CdTe quantum dots (QDs) embedded in ZnTe matrix have been investigated by micro-Raman spectroscopy. A reference ZnTe sample (without dots) was also studied for comparison. Both samples were grown by a molecular beam epitaxy technique on the p-type GaAs substrate. The Raman measurements have been performed at room temperature. The samples were excited by an Ar2+ laser of 514.5 nm wavelength. The Raman spectra have been recorded for different acquisition parameters of the measurement. For the reference and QD sample localized longitudinal (LO) phonons of 210 cm–1 wavenumber associated with the ZnTe layer are observed. In the case of QD sample another broadband corresponding to the LO CdTe phonon related to the QD-layer appears at a wavenumber of 160 cm–1. Such behaviour does not exhibit the Raman spectra of the reference sample. Thus the Raman measurements confirm the presence of CdTe layer of quantum dots in the investigated material. Additionally, Raman spectra for both samples exhibit tellurium-related peaks at wavenumbers around 120 cm–1 and 140 cm–1, significantly increasing with laser time exposure. It is shown that the peaks are associated with the formation of Te aggregates on the ZnTe surface due to the laser damage in the ZnTe layer.