Extreme ultraviolet (XUV) capillary-discharge lasers (CDLs) are a suitable source for the efficient, clean ablation of ionic crystals, which are obviously difficult to ablate with conventional, long-wavelength lasers. In the present study, a single crystal of cesium iodide (CsI) was irradiated by multiple, focused 1.5-ns pulses of 46.9-nm radiation delivered from a compact XUV-CDL device operated at either 2-Hz or 3-Hz repetition rates. The ablation rates were determined from the depth of the craters produced by the accumulation of laser pulses. Langmuir probes were used to diagnose the plasma plume produced by the focused XUV-CDL beam. Both the electron density and electron temperature were sufficiently high to confirm that ablation was the key process in the observed CsI removal. Moreover, a CsI thin film on MgO substrate was prepared by XUV pulsed laser deposition; a fraction of the film was detected by X-ray photoelectron spectroscopy.
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Atomic structure data and effective collision strengths for 1s2 2s2 2p6 3s2 3p6 3d10 and 54 fine-structure levels contained in the configurations 1s2 2s2 2p6 3s2 3p6 3d9 4l (l = s, p, d, f) for the nickel-like La ion have been investigated. These data are used in the determination of the reduced population for the 55 fine structure levels over a wide range of electron densities (from 1020 to 1022) and at various electron plasma temperatures. The gain coefficients for those transitions with positive population inversion factor are determined and plotted against the electron density.
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