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1 2023

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Compact terahertz devices based on silicon in CMOS and BiCMOS technologies

But Dmytro B., Chernyadiev Alexander V., Ikamas Kęstutis, Kołaciński Cezary, Krysl Anastasiya, Roskos Hartmut G., Knap Wojciech, Lisauskas Alvydas

Opto-Electronics Review

2023

Vol. 31, No. 2

art. no. e144599

This paper reports on compact CMOS-based electronic sources and detectors developed for the terahertz frequency range. It was demonstrated that with the achievable noise-equivalent power levels in a few tens of pW/√Hz and the emitted power in the range of 100 μW, one can build effective quasi-optical emitter-detector pairs operating in the 200–266 GHz range with the input power-related signal-to-noise ratio reaching 70 dB for 1 Hz-equivalent noise bandwidth. The applicability of these compact devices for a variety of applications including imaging, spectroscopy or wireless communication links was also demonstrated.