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Compact terahertz devices based on silicon in CMOS and BiCMOS technologies

But Dmytro B., Chernyadiev Alexander V., Ikamas Kęstutis, Kołaciński Cezary, Krysl Anastasiya, Roskos Hartmut G., Knap Wojciech, Lisauskas Alvydas

Opto-Electronics Review

2023

Vol. 31, No. 2

art. no. e144599

This paper reports on compact CMOS-based electronic sources and detectors developed for the terahertz frequency range. It was demonstrated that with the achievable noise-equivalent power levels in a few tens of pW/√Hz and the emitted power in the range of 100 μW, one can build effective quasi-optical emitter-detector pairs operating in the 200–266 GHz range with the input power-related signal-to-noise ratio reaching 70 dB for 1 Hz-equivalent noise bandwidth. The applicability of these compact devices for a variety of applications including imaging, spectroscopy or wireless communication links was also demonstrated.

THz detectors based on Si-CMOS technology field effect transistors : advantages, limitations and perspectives for THz imaging and spectroscopy

Marczewski J., Coquillat D., Knap W., Kolacinski C., Kopyt P., Kucharski K., Lusakowski J., Obrebski D., Tomaszewski D., Yavorskiy D., Zagrajek P., Ryniec R., Palka N.

Opto-Electronics Review

2018

Vol. 26, No. 4

261--269

Recent advances in THz detection with the use of CMOS technology have shown that this option has the potential to be a leading method of producing low-cost THz sensors with integrated readout systems. This review paper, based on authors’ years of experience, presents strengths and weaknesses of this solution. The article gives examples of some hints, regarding radiation coupling and readout systems. It shows that silicon CMOS technology is well adapted to the production of inexpensive imaging systems for sub-THz frequencies. As an example paper presents the demonstrator of a multipixel Si-CMOS THz spectroscopic system allowing for chemical identification of lactose. The THz detectors embedded in this system were manufactured using the CMOS process.

Semiconductor detectors and focal plane arrays for far-infrared imaging

Rogalski A.

Opto-Electronics Review

2013

Vol. 21, No. 4

406-426

The detection of far-infrared (far-IR) and sub-mm-wave radiation is resistant to the commonly employed techniques in the neighbouring microwave and IR frequency bands. In this wavelength detection range the use of solid state detectors has been hampered for the reasons of transit time of charge carriers being larger than the time of one oscillation period of radiation. Also the energy of radiation quanta is substantially smaller than the thermal energy at room temperature and even liquid nitrogen temperature. The realization of terahertz (THz) emitters and receivers is a challenge because the frequencies are too high for conventional electronics and the photon energies are too small for classical optics. Development of semiconductor focal plane arrays started in seventies last century and has revolutionized imaging systems in the next decades. This paper presents progress in far-IR and sub-mm-wave semiconductor detector technology of focal plane arrays during the past twenty years. Special attention is given on recent progress in the detector technologies for real-time uncooled THz focal plane arrays such as Schottky barrier arrays, field-effect transistor detectors, and microbolometers. Also cryogenically cooled silicon and germanium extrinsic photoconductor arrays, and semiconductor bolometer arrays are considered.