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Rozwiązania projektowo-techniczne 1. etapu realizacji Kampusu LPP Fashion Lab

Pachowski Piotr

Builder

2020

R.24, nr 2

30--34

W artykule omówiono rozwiązania techniczne związane z projektem i budową budynku biurowego w Gdańsku. Przedstawiono problemy związane z głębokim posadowieniem na terenie zagrożonym podtopieniami, wymagającym wykonania poziomej przesłony przeciwfiltracyjnej połączonej z obudową ścianami szczelinowymi. Opisano sposób modularnego kształtowania konstrukcji z betonu architektonicznego i dochodzenia do efektu metodą prób na budynku wzorcowym (mock-up). W rozwiązaniach projektowych znalazły się nietypowe stropy monolityczne z zatopionym układem chłodzącym BKT i wbudowanymi profilami stalowymi dla podwieszenia oświetlenia oraz dach szedowy, indywidualizujący charakter budynku.

In this paper, technical solutions, connected with the project and construction of the office building in Gdansk, have been discussed. Solutions and problems of waterproof barrier (horizontal jet-grouting diaphragm connected with slurry walls), required due to the deep foundation in the flood danger area, have been presented. Modular shaping of the RC structure of architectural concrete and testing the final effects on mock-up, have been described. In the design solutions there have been developed: non typical floor slabs with embedded cooling system BKT and build in steel profiles (due to suspended lighting) as well as the roof folded plate structure, which distinguishes the building form.

Evaluation of current density on the surface of the left atrium during TAS

Prochaczek F., Galecka J., Sikora M., Glasek J.

Journal of Medical Informatics & Technologies

2013

Vol. 22

243--249

Conditions for the indirect transesophageal atrial stimulation (TAS), useful for cardiac diagnosis and treatment, are optimized both by way of clinical experiment and a computer modelling. The paper demonstrates the results of comparison of electric current density, obtained on the surface of the left atrium during computer modelling, with the results of our own experiments. An evaluation was made with the use of spiral CT scanning of the distance between the esophagus and the posterior wall of the left atrium. The average distance in the tested group of 27 subjects was 4.7 ±σ = 1.1 mm. During transesophageal stimulation, we have determined the average excitation threshold of the left atrium, obtaining the value 5.5 ±σ = 1.8 mA in the examined group of 27 patients. The calculated average current density on the surface of left atrium for the selective electrode with point poles used in the experiment amounted to 39.6 μA/mm2. Electric current densities obtained by other researchers by means of computer modelling for omnidirectional and selective ring electrodes turned out to be much lower after adjustment to similar conditions, which was the result of electrically active larger sizes surfaces of the poles of electrodes used in the modelling.

Thermal assisted switching magnetic tunnel junctions as FPGA memory elements

Silva V., Fernandes J. R., Oliveira L. B., Neto H. C., Ferreira R., Freitas S., Freitas P. P.

International Journal of Microelectronics and Computer Science

2010

Vol. 1, nr 1

31-36

This paper presents our research and development work on new circuits and topologies based on Magnetic RAM for use as configuration memory elements of reconfigurable arrays. MRAM provides non volatility with cell areas and with access speeds comparable to those of SRAM and with lower process complexity than FLASH memories. The new memory cells take advantage of the Thermal Assisted Switching (TAS) writing technique to solve the drawbacks of the more common Field Induced Magnetic Switching writing technique. The CMOS circuit structures to implement the main components for reading and writing the MTJ cells have been developed, characterized and evaluated. A scaled down prototype of a coarse grain reconfigurable array that employs the TAS-MRAM elements as configuration memory has been designed and electrically simulated pre- and post- layout. The results obtained for all the circuit elements, namely the storage cells and the current generators, indicate that the new configuration memory cells can provide a very promising technological solution for run-time reconfigurable hardware devices. The prototype has been manufactured using a standard process 0.35μm 4-Metal CMOS process technology and should be under test in the foreseeable future.