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Plasma characterization of the gas-puff target source dedicated for soft X-ray microscopy using SiC detectors

Torrisi A., Wachulak P., Torrisi L., Bartnik A., Węgrzyński Ł., Fiedorowicz H.

Nukleonika

2016

Vol. 61, No. 2

139--143

An Nd:YAG pulsed laser was employed to irradiate a nitrogen gas-puff target. The interaction gives rise to the emission of soft X-ray (SXR) radiation in the ‘water window’ spectral range (λ = 2.3÷4.4 nm). This source was already successfully employed to perform the SXR microscopy. In this work, a Silicon Carbide (SiC) detector was used to characterize the nitrogen plasma emission in terms of gas-puff target parameters. The measurements show applicability of SiC detectors for SXR plasma characterization.

Comparative Tests of Temperature Effects on the Performance of Gan and Sic Photodiodes

Ćwirko J., Ćwirko R., Mikołajczyk J.

Metrology and Measurement Systems

2015

Vol. 22, nr 1

119--126

The paper presents a study of the performance of some selected UV detectors. Unlike many similar works, the obtained data refer to commercial photodiodes (not only to detector materials). The main task of the research was to determine the influence of the operating temperature and annealing on the detector spectral responsiveness. A comparison of the results obtained for the photodiodes made of GaN and SiC was also performed. Although both kinds of detectors can work at high temperatures for a long time, some modification of their properties was observed. However, for GaN and SiC photodiodes, this modification has a substantially different nature. It is very important for some applications, e.g. fire alarms and a military equipment.