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1
Content available The Influence of Ag2Te Addition on Thermoelectric Properties of Bismuth Telluride
Drzewowska Sylwia, Lan Tian-Wey, Onderka Bogusław
Archives of Metallurgy and Materials
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2022
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Vol. 67, iss. 1
5--15
EN
The resistivity, Seebeck coefficient and thermal diffusivity were determined for BiTe3 + Ag2Te composite mixtures. Subsequent measurements were carried out in the temperature range from 20 to 270°C, and for compositions from pure Bi2Te3 to xAg2Te = 0.65 selected along the pseudo-binary section of Ag-Bi-Te ternary system. It was found that conductivity vs. temperature dependence shows visible jump between 140 and 150°C in samples with highest Ag2Te content, which is due to monoclinic => cubic Ag2Te phase transformation. Measured Seebeck coefficient is negative for all samples indicating they are n-type semiconductors. Evaluated power factor is of the order 1.52·10-3 and it decreases with increasing Ag2Te content (at. %). Recalculated thermal conductivity is of the order of unity in W/(m K), and is decreasing with Ag2Te addition. Finally, evaluated Figure of Merit is 0.43 at 100°C and decreases with temperature rise.
2
Content available remote DC conductivity and Seebeck coefficient of nonstoichiometric MgCuZn ferrites
Madhuri W., Kiran S. R., Reddy M. P., Reddy N. R., Kumar K. V. S.
Materials Science Poland
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2017
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Vol. 35, No. 1
40--44
EN
Nonstoichiometric series of Mg0.5−xCuxZn0.5 Fe1.9 O4-δ where x = 0.0, 0.1, 0.15, 0.2 and 0.25 has been synthesized by conventional solid state reaction route. The single phase spinel structure of the double sintered ferrites was confirmed by X-ray diffraction patterns (XRD). The ferrite series was studied in terms of DC electrical conductivity and thermoelectric power in the temperature ranging from room temperature to 300 °C and 400 °C, respectively. It was observed that DC electrical conductivity and Seebeck coefficient α decreased with the increase in x. DC electrical conductivity was found to decrease by about 4 orders. All the compositions showed a negative Seebeck coefficient exhibiting n-type semiconducting nature. From the above experimental results, activation energy and mobility of all the samples were estimated. Small polaron hopping conduction mechanism was suggested for the series of ferrites. Owing to their low conductivity the nonstoichiometric MgCuZn ferrites are the best materials for transformer core and high definition television deflection yokes.
3
Content available Effect of Ga2O3 Nanoparticles Dispersion on Microstructure and Thermoelectric Properties of p-Type BiSbTe Based Alloys
Kim E.-B., Koo J.-M., Hong S.-J.
Archives of Metallurgy and Materials
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2017
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Vol. 62, iss. 2B
993--997
EN
In this study, p-type Bi0.5Sb1.5Te3 based nanocomposites with addition of different weight percentages of Ga2O3 nanoparticles are fabricated by mechanical milling and spark plasma sintering. The fracture surfaces of all Bi0.5Sb1.5Te3 nanocomposites exhibited similar grain distribution on the entire fracture surface. The Vickers hardness is improved for the Bi0.5Sb1.5Te3 nanocomposites with 6 wt% added Ga2O3 due to exhibiting fine microstructure, and dispersion strengthening mechanism. The Seebeck coefficient of Bi0.5Sb1.5Te3 nanocomposites are significantly improved owing to the decrease in carrier concentration. The electrical conductivity is decreased rapidly upon the addition of Ga2O3 nanoparticle due to increasing carrier scattering at newly formed interfaces. The peak power factor of 3.24 W/mK2 is achieved for the base Bi0.5Sb1.5Te3 sintered bulk. TheBi0.5Sb1.5Te3 nanocomposites show low power factor than base sample due to low electrical conductivity.
4
Wstęp do zagadnienia termoelektrycznej generacji prądu stałego
Kochanowski D., Ruciński A.
Chłodnictwo : organ Naczelnej Organizacji Technicznej
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2016
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R. 51, nr 5
12--14
PL
Praca wskazuje teoretyczne podstawy termogeneracji prądu elektrycznego kosztem różnicy temperatury pomiędzy źrodłem ciepła a otoczeniem. W zastosowaniach praktycznych jest to odpadowe źródło ciepła pozwalające zwiększać energooszczędność układów cieplno-mechanicznych korzystających ze spalania paliw kopalnych. W artykule przypomniano zalety i wady materiałów termoelektrycznych, jednocześnie wskazując intensywny postęp w poszukiwaniu doskonalszych półprzewodników. Wskazano proste zależności opisujące wielkość generowanego prądu elektrycznego. Pokazano definicję sprawności termogeneracji z uwzględnieniem opisu parametrów charakterystycznych zjawiska tj. natężenia i napięcia wytwarzanego prądu elektrycznego.
EN
The work indicates the theoretical basis of thermoelectric power generation thanks to temperature difference between the heat source and the environment. In practical applications it is a waste heat source what allows to increase energy efficiency of thermo-mechanical systems driven by fossil fuels. The article reminds the advantages and disadvantages of thermoelectric materials, while pointing to intense progress in semiconductors research and development. Simple relationship describing the generated electric current is presented. The author shows a definition of thermogeneration efficiency including a description of the characteristic parameters as voltage and amperage.
5
Content available Seebeck coefficient measurement by Kelvin-probe force microscopy
Ikeda H., Salleh F., Asai K.
Journal of Automation Mobile Robotics and Intelligent Systems
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2009
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Vol. 3, No. 4
49-51
EN
In order to measure the Seebeck coefficient of nanometer-scale thermoelectric materials, we propose a new technique in which the thermoelectric-motive force (TEMF) is evaluated by Kelvin-probe force microscopy (KFM). In this study, we measured the Seebeck coefficient of an n-type Si wafer. The surface-potential difference between the high- and low-temperature regions on the Si wafer increases with increasing temperature difference. This indicates that the TEMF can be measured by KFM. The Seebeck coefficient evaluated from the surface-potential difference is 0.71š0.08 mV/K, which is close to that obtained by the conventional method.
6
Content available Impurity-concentration dependence of seebeck coefficient in silicon-on-insulator layers
Salleh F., Asai K., Ishida A., Ikeda H.
Journal of Automation Mobile Robotics and Intelligent Systems
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2009
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Vol. 3, No. 4
134-136
EN
We measured the Seebeck coefficient of P-doped ultrathin silicon-on-insulator (SOI) layers with thicknesses of 6-100 nm. The dependence of the coefficient on the impurity concentration was investigated, and was shown to be in good agreement with that of bulk Si. In addition, it was found to decrease with increasing impurity concentration, as is usual in semiconductor materials. However, for doping levels above 3.5x1019 cm-3, the Seebeck coefficient was observed to increase. This is likely to be due to the influence of an impurity band.
7
Siła termoelektryczna cienkich warstw rezystywnych Ni-P
Pruszowski Z., Kowalik P.
Elektronika : konstrukcje, technologie, zastosowania
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2008
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Vol. 49, nr 1
70-71
EN
The paper presents the results of preliminary study concerning the thermo-electric force coefficients in thin amorphous precise Ni-P resistive layers. The experiment represents the situation where the temperature gradient occurs on the opposite ends of the resistor.
PL
W pracy przedstawiono wyniki wstępnych badań dotyczących określenia współczynników termoelektrycznych cienkich, amorficznych warstw rezystywnych Ni-P. W pracy skoncentrowano się na sytuacji w której gradient temperatury zostaje przyłożony do końcówek rezystora.
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