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Analiza porównawcza właściwości modeli tranzystorów IGBT w symulatorach środowiska SPICE

Pawelski W.

Elektronika : prace naukowe

2000

nr 5

87-117

Przedmiotem niniejszej pracy są ukladowo-zorientowane modele tranzystorów IGBT w szczególności przeznaczone do implementacji w środowisku SPICE - uniwersalnych symulatorów układów elektronicznych. Przedstawiono trzy różne makromodele IGBT zawarte w bibliotekach najnowszych wersji SPICE'a a także zaproponowano nowy nieliniowy model tego tranzystora. Zamieszczono wyniki badań porównawczych podstawowych właściwości statycznych i dynamicznych wszystkich czterech modeli.

The IGBT transistor models for power electronic circuits design are the object of studies in presented paper. Such models should be sufficiently simple for calculation, parameters extraction and results interpretation. Generally for the circuit-oriented IGBT model appreciate the relation of fitting error to number parameters can be used. This coefficient should be evidently a minimum value. Great number physical and dimensional parameters of the physic-based models are difficult to be extracted from electrical measurement without knowing the details of device structure and fabrication data and they can't perform of this demands. Using the IGBT macromodel basing on BJT and MOSFET submodels in pseudo Darlington configuration it can obtain better results. In presented paper the properties of three IGBT models used in SPICE environment simulator and new universal IGBT model proposed to these packets are compared. In paper the investigation results of the static characteristic and some dynamic state waveforms for all four models are presented and discussed. While comparing the four different models it has been noted that the adaptation of simple level=l or level=3 SPICE MOSFET submodel does not give a satisfactory fitting of the real IGBT characteristics in the triode range, despite relative accordance to the measurements in the pentode range. It has been particularly evident in the transfer static characteristics. It has been proved that it is possible to fit precisely the IGBT on-state also in the triode range, applying a new nonlinear function, proposed in this paper in one of submodel. The investigations of this new model have shown a very good agreement between the simulation and measurements and average fitting errors order 2 %. This approach also enables the modelling of the two basic types of the IGBT structures, both symmetric and asymmetric, without the changing of the numbers of parameters.