In this paper, a new design low profile periodic microstrip substrate integrated waveguide antenna with patch loaded for scanning radiation pattern for the main beam. The radiation pattern can be changing the elevation angle (beam direction) by using the square microstrip patch loaded on the edge of microstrip line, and that’s due to changing the reactive impedance of antenna. This square patches put closely of the free edge of radiation element and changing the patch load by connecting the patch with ground plane by pin vias. The gap between square patch and microstrip line is capacitor used to achieve the scanning main beam between the boreside and endfire direction. The proposed antenna can be scanning main beam direction between 25 to 78 with high realized gain 10 dBi with high performance of input impedance. The proposed design is very suitable for automotive radar.
PL
W tym artykule przedstawiono nową konstrukcję niskoprofilowego okresowego mikropaskowego podłoża zintegrowanego z anteną falowodową z łatą załadowaną do skanowania wzorca promieniowania dla wiązki głównej. Charakterystyka promieniowania może zmieniać kąt elewacji (kierunek wiązki) za pomocą kwadratowej łatki mikropaskowej ładowanej na krawędzi linii mikropaskowej, a to ze względu na zmianę impedancji biernej anteny. Te kwadratowe łaty nakładają się blisko wolnej krawędzi elementu promieniującego i zmieniają obciążenie łaty, łącząc łatę z płaszczyzną uziemienia za pomocą przelotek pinowych. Odstęp między kwadratową łatą a linią mikropaskową jest kondensatorem używanym do uzyskania skanującej wiązki głównej między kierunkiem odwiertu i końca. Proponowana antena może skanować kierunek wiązki głównej od 25 do 78 z wysokim zrealizowanym wzmocnieniem 10 dBi z wysoką wydajnością impedancji wejściowej. Proponowana konstrukcja jest bardzo odpowiednia dla radaru samochodowego.
The paper proposes a new third-order Chebyshev bandpass filter based on the substrate integrated waveguide (SIW) manufacturing technology using an inductive iris and a defected ground structure (DGS) station to resonate in the Ka frequency band, intended for wireless communication applications. All steps that are necessary for designing such a filter have been described in detail based on specific analytical equations harnessed to calculate the different synthesizable parameters of the proposed band-pass filter design, such as the coupling matrix, quality coefficients and initial geometric dimensions. The filter’s ideal frequency response is extracted from an equivalent circuit employing localized elements developed with the use of Design Microwave Office Software. Otherwise, HFSS is employed to set the initial parameters of the proposed topology that will not meet the target specifications defined previously. Accordingly, optimization procedures are necessary for different SIW band-pass filter parameters to reach a high frequency response for the proposed design. The detailed results presented show high efficiency of the SIW technology that offers good performance with lower filter volumes. Two topologies have been developed and then optimized to demonstrate the usefulness of EM software.
This paper describes a novel Substrate Integrated Waveguide (SIW) bandpass filter using Chebyshev approximation and Half Mode Substrate Integrated Waveguide (HMSIW)modeling technique. The developed 3 rd order filter structure uses an inductive iris and an inductive post station in a way it resonates in Ka frequency band serving wireless applications. The paper presents in details steps of the filter design formed by specific analytical equations to extract its different synthesizable parameters including coupling matrix, quality factor and initial geometric dimensions. The ideal frequency response of the filter is determined from an equivalent circuit that uses localized elements developed by AWR Microwave Software. High Frequency Structure Simulator (HFSS) is then employed to model the proposed filter structure and optimize its initial parameters until meeting the target specifications initially fixed in order to provide a high frequency response for the proposed filter design. Finally, the obtained results display a good performance for the proposed filter design and demonstrate a high usefulness for the employed technology that allows a low design volume.
In this paper, we proposed a novel design of U-slotted SIW antenna. Our antenna design is aimed to cover upper K-band and lower Ka-band spectrums, specifically from 24 GHz to 32 GHz. It has a compact square size of 5.2 x 5.2 mm2. We use a rectangular truncated corner to optimize the square radiator. The optimized rectangular truncated corner size of 2 x 0.8 mm2 gives an impedance bandwidth of 7.87 GHz. SIW cavity is constructed by using multiple metallic via-holes which are drilled in a dielectric substrate establishing. Next optimization, applying the U-shaped slot and SIW structure yield a wider impedance bandwidth of 8.89 GHz, there is about 1.02 GHz of impedance bandwidth enhancement. In addition, the SIW structure gives a higher gain of 7.63 dB and decreases the sidelobe level of -12.1 dB. Implementation of the SIW structure significantly decreases the size of antenna while keeping the antenna parameter’s performances.
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