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EN
High-repetition-frequency Q-switched laser is realized through adopting a Nd:LaMgAl11O19 (Nd:LMA) disordered crystal as the gain material, a laser diode lasing at 796 nm as the pumped source, and a semiconductor saturable absorber mirror (SESAM) as the Q-switched device. The out-put characteristics are analyzed under using different transmittance T plane mirrors as an output coupler. Without adopting SESAM, the laser is operating at a CW state, and a relatively high transmittance is helpful for achieving high output power, slope efficiency and light-to-light efficiency. ForT = 7.5% and an absorbed power of 6.17 W, the output power arrives at its maximum of 1160 mW,and the corresponding slope efficiency and light-to-light efficiency are 20.71% and 18.78%, respectively. After introducing SESAM into the cavity, the laser operates at a passively Q-switched state, and the largest slope efficiency is 13.14% under T = 5.0%. Adopting five different output couplers, with the increase of the absorbed power, the pulse repetition frequencies, the pulse energies and the peak powers will ascend while the pulse widths will decline. The observed narrowest pulse width, the maximum pulse repetition frequency, the highest pulse energy and peak power are 1.745 μs, 175.88 kHz, 3.21 μJ and 1.84 W, respectively.
2
Content available Ultrashort pulses supported by SESAM absorber
EN
We have developed a mode-locked diode-pumped Yb:KYW laser generating nearly band-width limited pulses as short as 101 fs. At 1.1 W absorbed power and 3% transmission output coupler, the laser delivers 150 mW for pulse duration of 110 fs, what corresponds to an efficiency of 14%. It was achieved using semiconductor saturable absorber mirror (SESAM) grown by molecular beam epitaxy. SESAM contains a distributed Bragg reflector (DBR) completed by single quantum well (SQW) playing role of an absorbing layer. The absorbers were crystallized in accordance with the predicted structure parameters under optimised growth conditions. The resonant-like type of structures ensured relatively high enhancement factor due to antireflective properties of SiO2 capping material and a wavelength independence of a group delay dispersion. The optimisation of the growth conditions of both an absorbing layer and DBR structure were widely carried out. Optical reflectance and high resolution X-ray diffraction have been used for characterization and verification of DBR structures. It results in reduction of the nonsaturable absorption in SESAM and self-starting mode-locking of the ultrashort pulses.
3
Content available remote CW mode locked Nd:YVO₄ laser pumped by 20-W laser diode bar
EN
The efficient cw mode locking (cw-ML) regime was demonstrated in Nd:YVO₄ laser by means of saturable absorber mirror (SAM). The 0.3-at.% Nd³⁺ doped 10-mm-long YVO₄ crystal end pumped by 20-W diode module with a beam shaper was applied as a gain medium located in the close vicinity to the rear flat mirror of the first arm of Z-type resonator of 316 cm total length with two curved mirrors of 100-cm curvature radii. The SAM of 2%-saturable absorptance and saturation fluence of 50 μJ/cm² was mounted at the opposite end of a resonator. The developed “dynamically stable” cavity design mitigates detrimental role of thermal aberration in gain medium, enforcing clean perfect mode locking even for the highest pump densities. The cw-ML pulses with 47.5 MHz repetition rate and pulse durations in the range of 15–20 ps were observed for a wide range of pump powers and output coupler losses. In the best case, for 32% of output coupler transmission, up to 6.2 W of average power with near 35% slope efficiency was achieved. The thresholds for Q-switched ML, cw-ML regimes were 2.67 W and 6.13 W of pump power, respectively. For the maximum pump power of 20 W we obtained 133 nJ of pulse energy with 16-ps pulse duration, resulting in a peak power higher than 8 kW. The threshold energy density at SAM giving the QML regime was estimated to be about 30 μJ/cm2, threshold of cw-ML regime was 220 μJ/cm².
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