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Simulation analysis for the efficiency enhancement of Sb2S3 solar cell using SCAPS-1D

Oglah Mubarak Hamad, Mahmood Watban Ibrahim, Adday Nawras Basheer

Computer Methods in Materials Science

2023

Vol. 23, No. 4

19--29

The simulation analysis was performed to enhance the efficiency of Sb2 S3 solar cells using the SCAPS-1D software. The Sb2 S3 compound was used as the absorber layer in the solar cell. The simulation was conducted to verify the efficiency and accuracy of the results obtained from the program. The results were found to be in agreement with the practical results. The original cell’s efficiency was 11.47% with a fill factor of 61.18%, and after the simulation, the efficiency was found to be 11.43% with a fill factor of 61.2%. To enhance the efficiency of the solar cell, a reflective background layer (BSL) was added. Different BSL layers were examined, including SnS, Si, CIGS, CZTSSe, and CUS bS3 , and the best reflective layer was found to be CUSbS3 . The solar cell structure was designed as follows: glass/Mo/CUSbS3 /Sb2 S3 /CdS/i:ZnO/AL:ZnO. After adding the reflective layer, the efficiency of the solar cell was found to be 20.59% with a fill factor of 87.53%. The results suggest that adding reflective layers to solar cells can enhance their performance and increase their efficiency.

Optimization of copper(I) thiocyanate as hole transport material for solar cell by Scaps-1D numerical analysis

Aliyaselvam Omsri Vinasha, Mat Junos Siti Aisah, Arith Faiz, Izlan Nurhazwani, Mohd Said Muzalifah, Mustafa Ahmad Nizamuddin

Przegląd Elektrotechniczny

2022

R. 98, nr 6

131--135

In SSDSSC, various key parameters of CuSCN as HTM were explored using SCAPS-1D simulation software. A layer thickness of 3 µm with a moderate value of interface defect density was obtained yielding 2.56% of PCE in SSDSSC. TiO2 ETM and Ni back contact was found to be the best combination with CuSCN HTM in SSDSSC. An excellent temperature gradient in a range between -0.04%/K and -0.05%/K was demonstrated, showing that the temperature tolerances of the studied devices are encouraging. In addition, PCE as high as 31.31% has been achieved by substituting the N719 dye with a perovskite absorbent of CH3NH3SnI3, and hence exceeding the previously reported PCE value in PSC. Other parameters that have been optimized are retained. Furthermore, the quantum efficiency of such structure has proved that cells with CH3NH3SnI3 absorbent layer can absorb a wider range of the light spectrum, enhancing the power conversion efficiency.

W SSDSSC różne kluczowe parametry CuSCN jako HTM były badane za pomocą oprogramowania symulacyjnego SCAPS-1D. Otrzymano warstwę o grubości 3 µm przy umiarkowanej wartości gęstości defektu powierzchni międzyfazowej, uzyskując 2,56% PCE w SSDSSC. Stwierdzono, że styk tylny TiO2 ETM i Ni jest najlepszą kombinacją z CuSCN HTM w SSDSSC. Wykazano doskonały gradient temperatury w zakresie od -0,04%/K do -0,05%/K, co pokazuje, że tolerancje temperaturowe badanych urządzeń są zachęcające. Ponadto PCE tak wysokie jak 31,31% osiągnięto przez zastąpienie barwnika N719 perowskitowym absorbentem CH3NH3SnI3, a zatem przekraczając wcześniej podaną wartość PCE w PSC. Pozostałe parametry, które zostały zoptymalizowane, zostają zachowane. Co więcej, wydajność kwantowa takiej struktury dowiodła, że ogniwa z warstwą pochłaniającą CH3NH3SnI3 mogą pochłaniać szerszy zakres widma światła, zwiększając efektywność konwersji energii.

Junction configurations and their impacts on Cu(In,Ga)Se₂ based solar cells performances

Guirdjebaye N., Ouédraogo Soumaila, Ngoupo Ariel, Tcheum G. L., Ndjaka Jean Marie Bienvenu

Opto-Electronics Review

2019

Vol. 27, No. 1

70--78

One dimension solar cells simulator package (SCAPS) is used to study the possibility of carrying out thin CIGS solar cells with high and stable efficiency. In the first step, we modified the conventional ZnO:B/i-ZnO/CdS/SDL/CIGS/Mo structure by substituting the SDL layer with the P₊ layer, having a wide bandgap from 1 to l.12 eV. Then, we simulated the J-V characteristics of this new structure and showed how the electrical parameters are affected. Conversion efficiency of 18.46% is founded by using 1.1 μm of P + layer thickness. Secondly, we analyze the effect of increase thickness and doping density of CIGS, CdS and P₊ layers on the electric parameters of this new structure. We show that only the short-circuit current density (JSC) and efficiency are improved, reaching respectively 34.68 mA/cm2 and 18.85%, with increasing of the acceptors density. Finally, we introduced 10 nm of various electron reflectors at the CIGS/Mo interface in the new structure to reduce the recombination of minority carriers at the back contact. High conversion efficiency of 23.34% and better stability are obtained when wide band-gap BSF is used.