Wyniki wyszukiwania - BazTech

1

Interconnections coupling through substrate for frequencies up to 100 GHz

Gerakis V, Hatzopoulos A.

International Journal of Microelectronics and Computer Science

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2014

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Vol. 5, nr 4

144--148

EN

This work presents a study on the substrate noise coupling between two interconnects. A highly, a lightly and a uniformly doped substrate, approximating most modern technologies, are described. The three different doping profiles are simulated for various interconnect distances and different metal layers assuming a 65 nm bulk CMOS technology. A proper data analysis methodology is presented, including z and s parameters extraction and de-embedding procedure.

2

Automated parameter extraction of geometry dependent RF planar inductor model

Durev V. P., Gadjeva E. D., Hristov M. H.

International Journal of Microelectronics and Computer Science

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2010

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Vol. 1, nr 3

257-262

EN

An approach is proposed in the present paper to parameter extraction of geometry dependent RF planar spiral inductor model. A direct extraction procedure is developed and realized in the Cadence PSpice and Cadence Probe environment based on the measured two-port S-parameters. To minimize the error for the full range of operation a Genetic Algorithm (GA) optimization procedure is applied in MATLAB environment. The approach is useful in RF model design, as the S-parameters can be easily measured for a given microelectronic technology. The proposed model extraction approach is characterized by a very good accuracy.

3

Projektowanie szerokopasmowych addytywnych wzmacniaczy rozłożonych

Kral J.

Elektrotechnika i Elektronika

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2006

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T. 25, z. 1

38-47

PL

W pracy zaprezentowano (konwencjonalne) wzmacniacze rozłożone, rzadko opisywane w publikacjach wydawanych w kraju, i omówiono ich części składowe (linie transmisyjne naturalne i sztuczne). Przedstawiono i przedyskutowano zależności na wzmocnienie wzmacniacza zarówno przy pominięciu, jak i uwzględnieniu strat w układzie. Zobrazowano przebiegi różnych charakterystyk układu dla konkretnie przyjętego tranzystora. Przedstawiono procedurę projektowania wzmacniacza oraz wyniki symulacji zaprojektowanej struktury w wersjach z różnymi liniami bez strat i ze stratami.

EN

Rarely met in Polish literature conventional distributed amplifiers are presented and their components (natural and artificial transmission lines) are discussed. Amplifier power gain formula for lossless and lossy structures is derived and discussed. Yarious characteristics are calculated and illustrated. Amplifier design procedure is presented as well as simulation results of some structures with lossless and lossy transistor model.

4

Critical modeling issues of SiGe semiconductor devices

Palankovski V., Selberherr S.

Journal of Telecommunications and Information Technology

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2004

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nr 1

15-25

EN

We present the state-of-the-art in simulation of silicon-germanium (SiGe) semiconductor devices. The work includes a detailed comparison of device simulators and current transport models. Among the critical modeling issues addressed in the paper, special attention is focused on the description of the anisotropic majority/minority electron mobility in strained SiGe grown on Si. We use a direct approach to obtain scattering parameters (S-parameters) and other derived figures of merit of SiGe heterojunction bipolar transistors (HBTs) by means of small-signal AC-analysis. Results from two-dimensional hydrodynamic simulations of SiGe HBTs are presented in good agreement with measured data. The examples are chosen to demonstrate technologically important issues which can be addressed and solved by device simulation.