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Crystal Lattice Damage and Recovery of Rare-Earth implanted Wide Bandgap Oxides

Sarwar Mahwish, Ratajczak Renata, Ivanov Vitalii, Mishra Sushma, Turek Marcin, Wierzbicka Aleksandra, Woźniak Wojciech, Guziewicz Elżbieta

Advances in Science and Technology. Research Journal

2022

Vol. 16, no 5

147--154

Rare earth (RE) elements are important for the optical tuning of wide bandgap oxides (WBO) such as β-Ga2O3 or ZnO, because β-Ga2O3:RE or ZnO:RE show narrow emission lines in the visible, ultra-violet and infra-red region. Ion implantation is an attractive method to introduce dopant into the crystal lattice with an extraordinary control of the dopant ion composition and location, but it creates the lattice damage, which may render the dopant optically inactive. In this research work, we investigate the post-implantation crystal lattice damage of two matrices of wide-bandgap oxides, β-Ga2O3 and ZnO, implanted with rare-earth (RE) to a fluence of 5 x 10^14, 1 x 10^15 and 3 x 10^15 atoms/cm^2, and post-growth annealed in Ar and O2 atmosphere, respectively. The effect of implantation and annealing on both crystal lattices was investigated by channeling Rutherford backscattering spectrometry (RBS/C) technique. The level of crystal lattice damage caused by implantation with the same RE fluences in the case of β-Ga2O3 seems to be higher than in the case of ZnO. Low temperature photoluminescence was used to investigate the optical activation of RE in both matrices after performed annealing.

Effect of substrate temperature on structural and optical properties of spray deposited ZnO thin films

Larbah Y., Adnane M., Sahraoui T.

Materials Science Poland

2015

Vol. 33, No. 3

491--496

Undoped ZnO thin films have been prepared on glass substrates at different substrate temperatures by spray pyrolysis method. The effect of temperature on the structural, morphological and optical properties of n-type ZnO films was studied. The X-ray diffraction (XRD) results confirmed that the ZnO thin films were polycrystalline with wurtzite structure. Scanning electron microscopy (SEM) measurements showed that the surface morphology of the films changed with temperature. The studies demonstrated that the ZnO film had a transmission of about 85 % and energy gap of 3.28 eV at 450 degrees C. The RBS measurements revealed that ZnO layers with a thickness up to 200 nm had a good stoichiometry.