Wyniki wyszukiwania - BazTech

1

Low Offset, High PSRR, CMOS Bandgap Voltage Reference

Zhao Y., Lai X.

Przegląd Elektrotechniczny

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2013

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R. 89, nr 1b

174--177

EN

A CMOS Bandgap Voltage Reference (BVR) with the characteristics of low offset and high power-supply rejection ratio (PSRR) is presented. In order to reduce the effect of offset of operation amplifier (OPA), the voltage difference of base-emitter junctions of substrate bipolar transistors is maximized; meanwhile the factor of offset voltage could be minimized. The feedback loop constructed by proportional to absolute temperature (PTAT) current source and an OPA is employed to improve the PSRR. The circuit was designed and simulated in a standard 0.35-μm CMOS process, with a power supply of 3 volt. The relative accuracy is increased by 5 times compared with conventional circuit. PSRR of the circuit is ～108dB at low-frequency. Furthermore, temperature coefficient (TC) of 17ppm/℃ over a wide temperature range of －40～115℃.The whole circuit including the OPA draws only 22 μA from supply voltage. Silicon area is 0.037mm2.

PL

Opisano pasmowy wzorzec napięcia w technologii CMOS charakteryzujący się małym pełzaniem zera i dużym współczynnikiem usuwania składowej zasilającej. Układ zaprojektowano w technologii 0.35μm z napięciem zasilania 3V.

2

Overheat protection circuit for high frequency processors

Frankiewicz M., Kos A.

Bulletin of the Polish Academy of Sciences. Technical Sciences

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2012

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Vol. 60, nr 1

55-59

EN

The paper describes design and structure of the overheat protection circuit based on the PTAT sensors. The digital core of the system is driven by a 3-bit information generated by the structure. As a result, behaviour of the core differs for each temperature. The circuit was designed in LF CMOS 0.15 ěm technology using full-custom technique. The presented paper focuses especially on the structure of the overheat protection circuit and simulations results of the functional blocks of the system. Layout and some parameters of the circuit are also considered.

3

Embedded PTAT temperature sensor for CMOS VLSI circuits

Gołda A., Kos A.

Elektronika : konstrukcje, technologie, zastosowania

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2006

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Vol. 47, nr 10

31-34

PL

Przedstawiono wyniki analiz teoretycznych i symulacji czujnika temperatury PTAT (ang. Proportional To Absolute Temperature - proporcjonalny do absolutnej temperatury) przeznaczonego do uktadów CMOS VLSI, których budowa wykorzystuje pionową strukturę PNP. Wykonane badania uwzględniają charakterystyczne właściwości materiałów tworzących strukturę elementu.

EN

The paper presents theoretical analyses and simulation results of a PTAT (Proportional To Absolute Temperature) temperature sensor that is based on the vertical PNP structure and dedicated to CMOS VLSI circuits. Performed considerations take into account specific properties of materials that forms electronic elements.