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InNAs : a new optoelectronic material for mid-infrared applications

Osiński M.

Opto-Electronics Review

2003

Vol. 11, No. 4

321-326

The InNx As1-x alloy is a very promissing, although so far almost completely unexplored, novel material for mid-IR emitters and detectors. InNAs/GaAs multiple quantum wells were grown by MOCVD on GaAs substrates, using dimenthylhydrazine (DMHy) as nitrogen precursor. The crystalline quality and solid phase composition were evaluated by high-resolution x-ray diffraction. The nitrogen content in InNAs wells was determined to be 18%. The measurements indicate high quality of quantum-well structures. The peak photoluminescence emission wavelengths of ~6.5 um at 30 K and ~7.2 um at 193 K are the longest reported so far for dilute nitride semiconductors.