Wyniki wyszukiwania - BazTech

Ograniczanie wyników

1 Opto-Electronics Review

1 2004

Znaleziono wyników: 1

Liczba wyników na stronie

Wyniki wyszukiwania

Wyszukiwano:
w słowach kluczowych: InGaAs photodiode

Sortuj według:

Ogranicz wyniki do:

Photodiode with resonant cavity based on InGaAs/InP for 1.9 µm band

Zynek J., Jasik A., Strupiński W., Rutkowski J., Jagoda A., Przyborowska K., Jakieła R., Piersa M., Wnuk A.

Opto-Electronics Review

2004

Vol. 12, No. 1

149-155

The results of the work aiming at development of a RCE photodiode operating at 1.9 µm are described. Detection is based on interband absorption in a thin pseudomorphic InGaAs layer placed inside a resonant cavity which enhances an optical field. The technology of heterostructures grown by MOCVD has been developed. The photodiode structure comprises, between two parallel Bragg mirrors, an InP p-i-n junction with a thin strained InxGa₁₋xAs (0.65≤x≤0.8) layer placed inside an undoped region. The bottom Bragg mirror is composed of an In₀.₅₃Ga₀.₄₇As/InP quarter-wave layer stack, the top mirror is made of Si/SiO₂ layers deposited on epitaxial layers by a sputtering method. Good properties of InxGa₁₋xAs strained layers and good reflectivity spectra of the Bragg mirrors enable us to obtain RCE photodetectors with photoresponse characteristics at wavelengths near 1.9 um. Photodetectors exhibit very low dark current densities (of the order of 10⁻⁶ A/cm²).