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InAs/InAsSb superlattice infrared detectors

Ting David Z., Soibel Alexander, Khoshakhlagh Arezou, Keo Sam A., Rafol Sir B., Fisher Anita M., Hill Cory J., Pepper Brian J., Maruyama Yuki, Gunapala Sarath D.

Opto-Electronics Review

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2023

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Vol. 31, Special Issue

art. no. e144565

EN

Mid-wavelength infrared detectors and focal plane array based on n-type InAs/InAsSb type- II strained layer superlattice absorbers have achieved excellent performance. In the long and very long wavelength infrared, however, n-type InAs/InAsSb type-II strained layer superlattice detectors are limited by their relatively small absorption coefficients and short growth-direction hole diffusion lengths, and consequently have only been able to achieve modest level of quantum efficiency. The authors present an overview of their progress in exploring complementary barrier infrared detectors that contain p-type InAs/InAsSb type-II strained layer superlattice absorbers for quantum efficiency enhancement. The authors describe some representative results, and also provide additional references for more indepth discussions. Results on InAs/InAsSb type-II strained layer superlattice focal plane arrays for potential NASA applications are also briefly discussed.

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Growth and characterisation of LWIR T2SL on (100)-, (211)- and (311)-oriented GaSb substrates

Lubyshev Dmitri, Fastenau Joel M., Kattner Michael, Frey Philip, Nelson Scott A., Flick Ryan, Wu Ying, Liu Amy W. K., Szymanski Dennis E., Martinez Becky, Furlong Mark J., Dennis Richard, Bundas Jason, Sundaram Mani

Opto-Electronics Review

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2023

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Vol. 31, Special Issue

art. no. e144568

EN

Ga-free InAs/InAsSb type-II superlattice structures grown on GaSb substrates have demonstrated high performance for mid-wave infrared applications. However, realisation of long wavelength infrared photodetectors based on this material system still presents challenges, especially in terms of reduced quantum efficiency. This reduction is due, in part, to the increased type-II superlattice period required to attain longer wavelengths, as thicker periods decrease the wave-function overlap for the spatially separated quantum wells. One way to improve long wavelength infrared performance is to modify the type-II superlattice designs with a shorter superlattice period for a given wavelength, thereby increasing the wave-function overlap and the resulting optical absorption. Long wavelength infrared epitaxial structures with reduced periods have been realised by shifting the lattice constant of the type-II superlattice from GaSb to AlSb. Alternatively, epitaxial growth on substrates with orientations different than the traditional (100) surface presents another way for superlattice period reduction. In this work, the authors evaluate the performance of long wavelength infrared type-II superlattice detectors grown by molecular beam epitaxy using two different approaches to reduce the superlattice period: first, a metamorphic buffer to target the AlSb lattice parameter, and second, structures lattices matched to GaSb using substrates with different orientations. The use of the metamorphic buffer enabled a ~30% reduction in the superlattice period compared to reference baseline structures, maintaining a high quantum efficiency, but with the elevated dark current related to defects generated in the metamorphic buffer. Red-shift in a cut-off wavelength obtained from growths on highindex substrates offers a potential path to improve the infrared photodetector characteristics. Focal plane arrays were fabricated on (100), (311)A- and (211)B-oriented structures to compare the performance of each approach.

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Demonstration of HOT photoresponse of MWIR T2SLs InAs/InAsSb photoresistors

Michalczewski Krystian, Tsai T. Y., Martyniuk P., Wu C. H.

Bulletin of the Polish Academy of Sciences. Technical Sciences

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2019

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Vol. 67, nr 1

141--145

EN

We report on the photoresponse of mid-wavelength infrared radiation (MWIR) type-II superlattices (T2SLs) InAs/InAsSb high operating temperature (HOT) photoresistor grown on GaAs substrate. The device consists of a 200 periods of active layer grown on GaSb buffer layer. The photoresistor reached a 50% cut-off wavelength of 5 μm and 6 μm at 200 K and 300 K respectively. The time constant of 30 ns is observed at 200 K under 1 V bias. This is the first observation of the photoresponse in MWIR T2SLs InAs/InAsSb above 200 K..

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Type-II superlattice detectors for free space optics applications and higher operating temperature conditions

Hackiewicz K., Martyniuk P., Rutkowski J., Manyk T., Mikołajczyk J.

Opto-Electronics Review

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2018

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Vol. 26, No. 4

279--284

EN

The utmost limit performance of interband cascade detectors optimized for the longwave range ofinfrared radiation is investigated in this work. Currently, materials from the III–V group are character-ized by short carrier lifetimes limited by Shockley-Read-Hall generation and recombination processes.The maximum carrier lifetime values reported at 77 K for the type-II superlattices InAs/GaSb andInAs/InAsSb in a longwave range correspond to ∼200 and ∼400 ns. We estimated theoretical detectivityof interband cascade detectors assuming above carrier lifetimes and a value of ∼1–50μs reported for awell-known HgCdTe material. It has been shown that for room temperature the limit value of detctivityis of ∼3–4×10¹⁰cmHz½/W for the optimized detector operating at the wavelength range ∼10μm couldbe reached.

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Detektory barierowe : nowe trendy

Martyniuk P., Kopytko M., Rogalski A.

Elektronika : konstrukcje, technologie, zastosowania

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2016

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Vol. 57, nr 9

62--65

PL

W artykule omówiono nowe trendy w rozwoju wysokotemperaturowych – nie wymagających chłodzenia kriogenicznego – barierowych detektorów podczerwieni. Przedstawiono podstawy teoretyczne, podstawową strukturę typu nBn, jak również dokonano przeglądu materiałów wykorzystywanych do wytwarzania detektorów barierowych pod względem granicznych wartości prądu ciemnego. Przedstawiono osiągi detektorów barierowych wytwarzanych z supersieci-II rodzaju materiałów grupy AIIIBV InAs/GaSb i InAs/InAsSb. W przypadku InAs/InAsSb szacowania teoretyczne wskazują na lepsze osiągi niż te uzyskiwane dla układu InAs/GaSb. Nie pominięto materiałów objętościowych z grupyAIIIBV: InAs, InAsSb i InGaAsSb, jak również dominującego obecnie HgCdTe. Detektory barierowe związków grupyAIIIBV, zarówno z materiałów litych jak i z supersieci-II typu, stanowią realną alternatywę dla HgCdTe do zastosowań wysokotemperaturowych, choć najniższe graniczne wartości prądu nadal uzyskuje się dla struktur z HgCdTe.

EN

In the paper we discussed the new trends in higher operating temperature – exhibiting no requirements related to the cryogenic cooling – the barrier IR detectors. We presented basic theory, simple nBn structure, and reviewed the materials used for the nBn detectors in terms of the utmost dark current. The performance was presented for type-II superllatices InAs/GaSb and InAs/InAsSb. Theoretical simulations indicate that T2SLs InAs/InAsSb exhibits lower SRH generation recombination rates in comparison to the InAs/GaSb. The performance of the bulk InAsSb and HgCdTe materials was also presented. TheAIIIBV bulk and type-II superlattices barrier detectors could be treated as an alternative to the HgCdTe detectors for higher operating temperature conditions. The utmost dark current was found for HgCdTe nBn barrier detectors.