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Optimised magnetron sputtering method for the deposition of indium tin oxide layers

Musztyfaga-Staszuk Małgorzata, Pudiš Dušan, Socha Robert, Gawlińska-Nęcek Katarzyna, Panek Piotr

Bulletin of the Polish Academy of Sciences. Technical Sciences

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2021

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Vol. 69, nr 6

art. no. e139005

EN

The article presents the method of magnetron sputtering for the deposition of conductive emitter coatings in semiconductor structures. The layers were applied to a silicon substrate. For optical investigations, borosilicate glasses were used. The obtained layers were subjected to both optical and electrical characterisation, as well as structural investigations. The layers on silicon substrates were tested with the four-point probe to find the dependence of resistivity on the layer thickness. The analysis of the elemental composition of the layer was conducted using a scanning electron microscope equipped with an EDS system. The morphology of the layers was examined with the atomic force microscope (AFM) of the scanning electron microscope (SEM) and the structures with the use of X-ray diffraction (XRD). The thickness of the manufactured layers was estimated by ellipsometry. The composition was controlled by selecting the target and the conditions of the application, i.e. the composition of the plasma atmosphere and the power of the magnetrons. Based on the obtained results, this article aims to investigate the influence of the manufacturing method and the selected process parameter on the optical properties of thin films, which should be characterised by the highest possible value of the transmission coefficient (>85–90%) and high electrical conductivity.

2

Synthesis of an optical catalyst for cracking contaminating dyes in the wastewater of factories using indium oxide in nanometer and usage in agriculture

Ahmed Ishaq F. E., El-Shenawy Ahmed I., Refat Moamen S.

Polish Journal of Chemical Technology

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2019

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Vol. 21, nr 4

98--105

EN

Herein, the photocatalytic degradation of the Congo Red (CR) and Crystal Violet (CV) dyes in an aqueous solution were discussed in the presence of an indium(III) oxide (In2O3) as optical catalyst efficiency. The caproate bidentate indium(III) precursor complex has been synthesized and well interpreted by elemental analysis, molar conductivity, Fourier transform infrared (FT-IR), UV-Vis, and thermogravimetric (TGA) with its differential thermogravimetric (DTG) studies. The microanalytical and spectroscopic assignments suggested that the associated of mononuclear complex with 1:3 molar ratio (M3+:ligand). Octahedral structure is speculated for this parent complex of the caproate anion, CH3(CH2)4COO− ligand. The In2O3 NPs with nanoscale range within 10–20 nm was synthesized by a simple, low cost and eco-friendly method using indium(III) caproate complex. Indium oxide nanoparticles were formed after calcination of precursor in static air at 600°C for 3 hrs. The structural, grain size, morphological and decolorization efficiency of the synthesized NPs were characterized using the FT-IR, X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray analysis (EDX) and transmission electron microscopy (TEM) analyses. It was worthy mentioned that the prepared In2O3 NPs showed a good photodegradation properties against CR and CV organic dyes during 90 min.

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Optymalizacja technologii reotaksjalnego osadzania nanowarstw wybranych przezroczystych tlenków przewodzących

Szuber J., Kwoka M., Kościelniak P., Sitarz M.

Elektronika : konstrukcje, technologie, zastosowania

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2011

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Vol. 52, nr 9

25-27

PL

W pracy opisano wyniki wstępnych badań nad optymalizacją technologu reotaksjalnego RGTO osadzania nanowarstw wybranych przezroczystych tlenków przewodzących (SnO₂ , In₂O₃) w nanoskali, na podstawie badań z wykorzystaniem wybranych powierzchniowych metod analitycznych (SEM, AFM, XPS), w aspekcie ich zastosowań m.in w sensoryce gazów toksycznych.

EN

In this paper the primary results of studies on Optimization of rheotaxial technology for the deposition of nanolayers of the selected transparent conductive oxides (SnO₂, In₂O₃) in nanoscale based on the study with the selected surface analytical methods (SEM, AFM, XPS), have been presented in aspects for application in gas sensors of toxic gases.

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Ti-doped In2O3 transparent conductive thin films with high transmittance and low resistivity

Song Z., Fu Q., Li L., Li L., An Y., Wang Y.

Optica Applicata

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2010

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Vol. 40, nr 4

751--757

EN

Ti-doped In2O3 thin films have been prepared on glass substrate by radio frequency (RF) sputtering with different sputtering powers (90, 120, 150, and 180 W) at 330 °C. The influence of sputtering power on the structural, electrical and optical properties of the deposited thin films is investigated. The average transmittance of the thin films in the wavelength range of 500-1100 nm is over 90%. Low resistivity of 7.3×10-4 ?cm is also obtained based on our thin films, suggesting that Ti-doped In2O3 is a good candidate for transparent conductive thin film.

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Ta-doped In2O3 transparent conductive films with high transmittance and low resistance

Wang B., Hu L. M., Liu F. M., Qin L., Liu Y., Wang L. J.

Optica Applicata

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2010

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Vol. 40, nr 1

25--31

EN

Ta-doped In2O3 transparent conductive oxide (TCO) thin films are deposited on glass substrates by radio-frequency (RF) sputtering at room-temperature. The influence of sputtering power on the structural, morphologic, electrical, and optical properties of the films is investigated by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), Hall measurement, and optical transmission spectroscopy. The obtained films are polycrystalline with a cubic structure and preferentially oriented in the (222) crystallographic direction. The minimum resistivity of 2.8×10-4 ?cm is obtained from the film deposited at the sputtering power of 170 W. The average optical transmittance of the films is over 90%.