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GaN - "High Pressure Semiconductor" in Modern Physics and Technology

Grzegory I., Porowski S.

Polish Journal of Chemistry

2008

Vol. 82, nr 10

1869-1890

Due to the strong binding energy of nitrogen molecule, GaN is unstable at high temperatures in relation to its constituents. Consequently, high temperature crystallization methods which are necessary for high quality bulk single crystals, require high pressures. GaN and its ternaries with In and Al form a foundation for the fast est growing sectors of semiconductor technology, such as short wave length optoelectronics and high-power high-frequency electronics. In this paper crystallization, physical properties and applications of GaN single crystals are discussed, with a special focus on the results coming from the Institute of High Pressure Physics of Polish Academy of Sciences.

Semiconductor cleaning technology for next generation material systems

Ruzyllo J.

Journal of Telecommunications and Information Technology

2007

nr 2

44-48

This paper gives a brief overview of the challenges wafer cleaning technology is facing in the light of advanced silicon technology moving in the direction of non-planar device structures and the need for modified cleans for semiconductors other than silicon. In the former case, the key issue is related to cleaning and conditioning of vertical surfaces in next generation CMOS gate structure as well as deep 3D geometries in MEMS devices. In the latter, an accelerated pace at which semiconductors other than silicon are being introduced into the mainstream manufacturing calls for the development of material specific wafer cleaning technologies. Examples of the problems related to each challenge are considered.