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Characterization of sol-gel derived Yttrium Doped n-ZnO/p-Si Heterostructure

Kumar N., Kaur R., Mehra R.M.

Materials Science Poland

2006

Vol. 24, No. 2/1

375--383

This paper reports the experimental and theoretical analysis of current-voltage characteristics of n-ZnO/ p-Si (100) heterostructures. The yttrium doped ZnO films have been deposited on p-Si by sol-gel process using spin coating technique. The structural and electrical properties have been studied as a function of annealing temperature. The experimental data have been analyzed by modifying the current voltage relation predicted by Perlman and Feucht. An estimate of the defect density at the ZnO/Si interface has been made using the Mott-Schottky (C-2-U) plots.