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EN
Structural and electrical properties of thin diamond films have been studied and discussed in terms of deposition conditions. Diamond films were produced by Hot-Filament CVD (HF-CVD) method modified by doping and electron bombardment of growing surface. Morphological changes were investigated by the scanning electron microscopy (SEM) method reproducing shape of diamond surface. Parameters characterising quality of deposited samples were estimated from Raman scattering measurements. Furthermore, analysis of X-ray scattering data based on Debye-Scherrer equation is described resulting in estimation of grain size and level of stresses of the CVD diamond films. Finally, I-V characteristics of investigated samples are plotted. They are discussed in terms of rectifying properties of such structures caused by distortions of the lattice (Martin's model).
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