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History of HgTe-based photodetectors in Poland

Rogalski A.

Opto-Electronics Review

2010

Vol. 18, No. 3

284-294

In Poland, the HgCdTe studies began in 1960 at the Institute of Physics, Warsaw University. The material processing laboratory was created by Giriat and later by Dziuba, Gałązka, and others. Bridgman technique with sealed thick wall quartz ampoules was used to grow material suitable for research and experimental devices. Among the first papers published in 1961 and 1963 there were the Polish works devoted to preparation, doping, and electrical properties of HgCdTe. Infrared detector's research and development efforts in Poland were concentrated mostly on uncooled market niche. At the beginning, a modified isothermal vapour phase epitaxy has been used for research and commercial fabrication of photoconductive, photoelectromagnetic and other HgCdTe devices. Bulk growth and liquid phase epitaxy were also used. Recently, the fabrication of infrared devices relies on low temperature epitaxial technique, namely metalorganic vapour phase deposition. At present stage of development, the photoconductive and photoelectromagnetic (PEM) detectors are gradually replaced with photovoltaic devices which offer inherent advantages of no electric or magnetic bias, no heat load and no flicker noise. Potentially, photodiodes offer high performance and very fast response. However, conventional photovoltaic uncooled detectors suffer from low quantum efficiency and very low junction resistance. The problems have been solved with advanced band gap engineered architecture, multiple cell heterojunction devices connected in series, and monolithic integration of the detectors with microoptics. In final part of the paper, the Polish achievements in technology and performance of HgMnTe and HgZnTe photodetectors are presented.

Photoelectric properties of HgMnTe photodiodes with ion etched p-n junctions

Kosyachenko L. A., Rarenko I. M., Weiguo S., Zengxiong L., Qibing G.

Opto-Electronics Review

2000

Vol. 8, No. 3

251-262

Thotodiodes with p-n junctions formed by ion etching of p-Hg1-xMnxTe (x ≈1) are reported. The multielement photodiode arrays for mid-infrared region were fabricated using surface passivation, photolithography and three-layer metallisation processes. The absorption curves of the crystals found from optical measurements are treated within the Kane theory for semiconductors with highly nonparabolic energy bands. The parameters of the diodes are obtained from their electrical study. It is shown that due to strong degeneracy of the n+ - layer the Hg1-xMnxTe diode structure can be considered as one-sided abrupt n+ -p junction with the barrier height larger significantly than the semiconductor bandgap. The diode responsivity spectra are interpreted in the framework of model taking into account the generation of photocarriers in n+ - and p-regions as well as in the depletion layer. The diode photoresponsivity in the region of the photon energies below semiconductor bandgap is shown to be caused by the gentle slope of the observed absorption edge. Temperature measurements reveal essential peculiarities of carrier tunnelling in the diodes. Invoking the general expression for the tunnelling probability and taking into consideration the opposing flow of electrons allow the observed tunnelling decay at low reverse biases to be explained. The zero bias resistance-area product (RoA) for the Hg1-xMNxTe diodes with cutoff wavelengths 7-8 and 10-11um amount up to 20-30 and ~ 500 Ω cm2, respectively, indicating the photodiodes under study to be competitive with Hg1-xCdxTe photovoltaic detectors.