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1 2010

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320x256 HgCdTe IR FPA with a built-in shortwave cut-off filter

Vasilyev V. V., Varavin V. S., Dvoretsky S. A., Marchishin I. V., Mikhailov N. N., Predein A. V., Remesnik V. G., Sabinina I. V., Sidorov Y. G., Susliakov O. A.

Opto-Electronics Review

2010

Vol. 18, No. 3

236-240

A photovoltaic detector design based on the graded band gap HgCdTe MBE structure with high conductivity layer (HCL) at interface, which provides photodiodes series resistance and a shortwave cut.off filter is developed. The optimal HCL parameters giving high quantum efficiency and minimal noise equivalent temperature difference were determined by calculations and experimentally confirmed. The hybrid 320x256 IR FPA operating in 8-12 μm spectral range was fabricated. The threshold power responsivity and minimal noise equivalent temperature difference values at wavelength maximum were 1.02x10⁻⁷ W/cm², 4.1x10⁸ V/W and 27 mK, respectively.