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2 2014

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MOCVD grown MWIR HgCdTe detectors for high operation temperature conditions

Martyniuk P., Koźniewski A., Kębłowski A., Gawron W., Rogalski A.

Opto-Electronics Review

2014

Vol. 22, No. 2

118-126

The paper reports on photoelectrical performance of the mid-wave infrared HgCdTe detector for high operating temperature condition. Detector structure was simulated with APSYS numerical platform by Crosslight Inc. The comprehensive analysis of the detector performance such as dark current, detectivity, time response vs. device architecture and applied bias has been performed. The N⁺pP⁺n⁺ HgCdTe heterostructure photodiode operating in room temperature at a wavelength range of 2.6–3.6 μm enabled to reach: detectivity ~ 8.7×10¹⁰ cmHz¹/²/W, responsivity ~ 1.72 A/W and time response ~ 145 ps(V = 200 mV).

Measurements of low frequency noise of infrared photo-detectors with transimpedance detection system

Ciura Ł., Kolek A., Gawron W., Kowalewski A., Stanaszek D.

Metrology and Measurement Systems

2014

Vol. 21, nr 3

461--472

The paper presents the method and results of low-frequency noise measurements of modern mid-wavelength infrared photodetectors. A type-II InAs/GaSb superlattice based detector with nBn barrier architecture is compared with a high operating temperature (HOT) heterojunction HgCdTe detector. All experiments were made in the range 1 Hz - 10 kHz at various temperatures by using a transimpedance detection system, which is examined in detail. The power spectral density of the nBn’s dark current noise includes Lorentzians with different time constants while the HgCdTe photodiode has more uniform 1/f - shaped spectra. For small bias, the low-frequency noise power spectra of both devices were found to scale linearly with bias voltage squared and were connected with the fluctuations of the leakage resistance. Leakage resistance noise defines the lower noise limit of a photodetector. Other dark current components give raise to the increase of low-frequency noise above this limit. For the same voltage biasing devices, the absolute noise power densities at 1 Hz in nBn are 1 to 2 orders of magnitude lower than in a MCT HgCdTe detector. In spite of this, low-frequency performance of the HgCdTe detector at ~ 230K is still better than that of InAs/GaSb superlattice nBn detector.