Wyniki wyszukiwania - BazTech

1

Wpływ składu materiałowego cienkich warstw HfO2-TiO2 na ich właściwości strukturalne oraz optyczne

Poniedziałek A., Mazur M., Górnicka B., Pierściński R., Karpiński M.

Elektronika : konstrukcje, technologie, zastosowania

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2016

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Vol. 57, nr 7

6--8

PL

W pracy przedstawiono wyniki badania wpływu składu materiałowego cienkich warstw TiO2-HfO2 na ich właściwości strukturalne oraz optyczne. Cienkie warstwy tlenków TiO22 oraz ich mieszanin zostały wytworzone za pomocą rozpylania magnetronowego. Zmiana składu materiałowego cienkich warstw miała znaczący wpływ na właściwości strukturalne, powierzchni oraz optyczne. Wytworzone cienkie warstwy z wyjątkiem (Hf0.55Ti0.45)Ox były nanokrystaliczne o średnim rozmiarze krystalitów około 7-11 nm. Obrazy otrzymane przy użyciu skaningowego mikroskopu elektronowego potwierdziły, że cienkie warstwy zbudowane były z ziaren o różnych kształtach oraz rozmiarach z wyjątkiem powłoki, która w mieszaninie miała największą ilość domieszki Ti. Badania przedstawione w pracy pokazały zmianę współczynnika transmisji światła wraz ze wzrostem zawartości TiO2 w mieszaninach. Zaobserwowano także przesunięcie długości fali odcięcia w stronę fal dłuższych oraz wzrost wartości współczynnika załamania światła.

EN

This paper provides research investigation results and analysis of various properties of thin films based on TiO2-HfO2 composites. Thin-film coatings were deposited using multitarget magnetron sputtering stand. Several sets of thin films, including undoped HfO2, TiO2 and their composites, were prepared and their structural and optical properties were discussed. Structural properties were analyzed using results obtained by x-ray diffraction method. In turn, optical properties were evaluated based on the transmission spectra of deposited thin films. It was found that material composition of prepared coatings has an impact on their various properties. Undoped coatings and thin films with lower content of titanium were nanocrystalline, while (Hf0.55Ti0.45)Ox was amorphous. Research on optical properties has shown that transmission of the light of deposited thin films changed with the increase of TiO2 content. It was also observed that Icut-off was shifted towards higher wavelength range and refractive index increased with larger amount of titanium in prepared thin films.

2

Optical properties of the Al2O3/SiO2 and Al2O3/HfO2/SiO2 antireflective coatings

Marszalek K, Winkowski P, Jaglarz J.

Materials Science Poland

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2014

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Vol. 32, No. 1

80--87

EN

Investigations of bilayer and trilayer Al2O3/SiO2 and Al2O3/HfO2/SiO2 antireflective coatings are presented in this paper. The oxide films were deposited on a heated quartz glass by e-gun evaporation in a vacuum of 5 × 10 -3 [Pa] in the presence of oxygen. Depositions were performed at three different temperatures of the substrates: 100 °C, 200 °C and 300 °C. The coatings were deposited onto optical quartz glass (Corning HPFS). The thickness and deposition rate were controlled with Inficon XTC/2 thickness measuring system. Deposition rate was equal to 0.6 nm/s for Al2O3, 0.6 nm – 0.8 nm/s for HfO2 and 0.6 nm/s for SiO2. Simulations leading to optimization of the thin film thickness and the experimental results of optical measurements, which were carried out during and after the deposition process, have been presented. The optical thickness values, obtained from the measurements performed during the deposition process were as follows: 78 nm/78 nm for Al2O3/SiO2 and 78 nm/156 nm/78 nm for Al2O3 /HfO2/SiO2. The results were then checked by ellipsometric technique. Reflectance of the films depended on the substrate temperature during the deposition process. Starting from 240 nm to the beginning of visible region, the average reflectance of the trilayer system was below 1 % and for the bilayer, minima of the reflectance were equal to 1.6 %, 1.15 % and 0.8 % for deposition temperatures of 100 °C, 200 °C and 300 °C, respectively.

3

Procesy trawienia suchego ICP w plazmie BCI₃ cienkich warstw HfO₂ wytworzonych techniką reaktywnego rozpylania katodowego

Kruszka R., Gołaszewska K., Taube A., Pasternak I., Korwin-Mikke K., Wzorek M., Kamińska E., Piotrowska A.

Elektronika : konstrukcje, technologie, zastosowania

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2011

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Vol. 52, nr 9

91-94

PL

W pracy przedstawiono wyniki trawienia plazmowego ICP warstw HfO₂ wytwarzanych metodą reaktywnego rozpylania katodowego. Na podstawie badań porównawczych procesów trawienia wybrano plazmę BCI₃: F(sub)BCI3 = 30 sccm, P(sub)ICP/P(sub)RIE = 1000 W/100W, p = 10 mTorr, T = 20°C. Określono szybkość trawienia tlenku hafnu wynoszącą v∼80 nm/min, oraz seleklywność trawienia w stosunku do Si i SiC oraz selektywność trawienia HfO₂ do materiału maski tlenkowej (SiO₂) i emulsyjnej.

EN

In this paper we present the results of the ICP etching of the HfO₂ layers deposited by the reactive sputtering After the comparative tests of the process parameters, BCI₃ plasma (f(sub)BCI3 = 30sccm, P(sub)ICP/P(sub)RIE = 1000W/100W, p = 10 mTorr, T = 20 °C) has been chosen. Etching rate of ∼80nm/min has been determined. Etching selectivity HfO₂:Si and HfO₂: SiC as well as selectmty to oxide (SIO₂) and emulsion masks have been measured. No changes in the roughness of HfO₂ layers have been observed.

4

Superplastic properties of zirconia-hafnia composites doped with various oxides

Boniecki M., Librant Z., Wesołowski W.

Materiały Ceramiczne

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2010

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T. 62, nr 3

259-265

EN

The influence of 1 mol% dopant of various oxides on the superplastic flow of yttria stabilized tetragonal zirconia ceramics and zirconia – 10 mol% hafnia composite was examined in the temperature range 1553–1773 K. It was claimed that doping caused the increase of superplastic strain rate in zirconia and in zirconia-hafnia composite in comparison with undoped materials. The maximum strain rate for zirconia was measured for GeO2 addition; it was 16x higher than in pure ceramics, but for zirconia-hafnia the maximum strain rate was for SiO2 dopant (4x higher than in pure composite). There is a linear relationship between the grain boundary diffusion coefficient of Zr4+ and superplastic strain rate for zirconia ceramics. For zirconia-hafnia composite this relationship is not so obvious because of high strain rate for SiO2 addition.

PL

Zbadano wpływ dodatku 1. % mol. różnych tlenków na nadplastyczne płynięcie ceramiki tetragonalnego dwutlenku cyrkonu stabilizowanego tlenkiem itru i kompozytu ZrO2-10 % mol. HfO2 w zakresie temperatury 1553–1773 K. Stwierdzono, że domieszkowanie spowodowało wzrost szybkości nadplastycznego odkształcania dwutlenku cyrkonu i kompozytu ZrO2-HfO2 w porównaniu z materiałami bez domieszek. Maksymalną szybkość odkształcania zmierzono w przypadku dodatku GeO2; była ona16x większa niż w czystej ceramice, ale w przypadku ceramiki ZrO2-HfO2 maksymalna szybkość odkształcania pojawiła się dla domieszki SiO2 (4x większa niż dla czystego kompozytu. Zależność pomiędzy współczynnikiem dyfuzji po granicach Zr4+ i nadplastyczną szybkością odkształcania ceramiki cyrkoniowej była liniowa. W przypadku kompozytu ZrO2-HfO2 zależność ta nie była tak oczywista z powodu wysokiej szybkości odkształcania zmierzonej dla dodatku SiO2.

5

Characterization of oxidic and organic materials with synchrotron radiation based XPS and XAS

Schmeisser D., Tallarida M., Henkel K., Müller K., Mandal D., Chumakov D., Zschech E.

Materials Science Poland

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2009

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Vol. 27, No. 1

141--157

EN

The use of synchrotron radiation (SR) based X-ray absorption spectroscopy (XAS) and X-ray induced photoelectron spectroscopy (XPS) is demonstrated for the analysis of thin films. In the first part we report on oxidic films used for high-k dielectric films in Si technology and focus on a recent in-situ approach to study the atomic layer deposition growth of HfO2 films. We demonstrate that even hidden layers can be characterized by using fluorescence technologies. In the second part, we demonstrate the suitability of SR based techniques for the analysis of organic thin films. Here, the first example deals with P(VDF-TrFE), a ferroelectric polymer, with possible applications in non-volatile memory devices. Another example concerns the analysis of C60 based low-k polymers for use in Cu interconnect systems.

6

First principles molecular dynamics simulations for amorphous HfO2 and Hf1-xSixO2 systems

Ikeda M., Kresse G., Nabatame T., Toriumi A.

Materials Science Poland

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2005

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Vol. 23, No. 2

401--406

EN

Amorphous phases of HfO2 and Hf1-xSixO2 were obtained using the Projector Augmented Plane Wave method through the melt and quench technique. For the pure HfO2 system, several pore channels appear in the structures. Changes to x in the Hf1-xSixO2 were also studied. As the concentration of Si increases, the size of the pore channels increases, much space appears and two- fold oxygen atoms increase. By calculating the heat of formation energy, it was found that phase separation between amorphous HfO2 and SiO2 occurs at x> 0.1.

7

Badania warstw HfO2 metodą AFM i metodami rentgenowskimi

Ciosek J., Pankowski P., Pełka J. B., Paszkowicz W., Baczewski L. T.

Elektronika : konstrukcje, technologie, zastosowania

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2001

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Vol. 42, nr 8-9

60-62

EN

Dielectric hafnia layers are used in laser mirrors for UV-IR ranges. They are characterised by unique properties, because except for their good resistively on high-energy laser beam, they also exhibit o low scattering level and low absorption coefficient for radiation from 0,25 u.m to 7 um. The layers were evaporated by PVD method with electron beam (EB) guns. Morphology of the experimental material's layers was studied by X-ray diffraction (XRD) and X-ray reflectometry (GIXR). Their radiation-damage threshold was investigated at wavelength of Nd:YAG laser. The analysis demonstrates a structural difference between HfO2 layers evaporated on the BK7 glass and on melted quartz susbstrates.