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MOCVD grown MWIR HgCdTe detectors for high operation temperature conditions

Martyniuk P., Koźniewski A., Kębłowski A., Gawron W., Rogalski A.

Opto-Electronics Review

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2014

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Vol. 22, No. 2

118-126

EN

The paper reports on photoelectrical performance of the mid-wave infrared HgCdTe detector for high operating temperature condition. Detector structure was simulated with APSYS numerical platform by Crosslight Inc. The comprehensive analysis of the detector performance such as dark current, detectivity, time response vs. device architecture and applied bias has been performed. The N⁺pP⁺n⁺ HgCdTe heterostructure photodiode operating in room temperature at a wavelength range of 2.6–3.6 μm enabled to reach: detectivity ~ 8.7×10¹⁰ cmHz¹/²/W, responsivity ~ 1.72 A/W and time response ~ 145 ps(V = 200 mV).

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HOT infrared photodetectors

Martyniuk P., Rogalski A.

Opto-Electronics Review

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2013

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Vol. 21, No. 2

239-257

EN

At present, uncooled thermal detector focal plane arrays are successfully used in staring thermal imagers. However, the performance of thermal detectors is modest, they suffer from slow response and they are not very useful in applications requiring multispectral detection. Infrared (IR) photon detectors are typically operated at cryogenic temperatures to decrease the noise of the detector arising from various mechanisms associated with the narrow band gap. There are considerable efforts to decrease system cost, size, weight, and power consumption to increase the operating temperature in so-called high-operating-temperature (HOT) detectors. Initial efforts were concentrated on photoconductors and photoelectromagnetic detectors. Next, several ways to achieve HOT detector operation have been elaborated including non-equilibrium detector design with Auger suppression and optical immersion. Recently, a new strategies used to achieve HOT detectors include barrier structures such as nBn, material improvement to lower generation-recombination leakage mechanisms, alternate materials such as superlattices and cascade infrared devices. Another method to reduce detector's dark current is reducing volume of detector material via a concept of photon trapping detector. In this paper, a number of concepts to improve performance of photon detectors operating at near room temperature are presented. Mostly three types of detector materials are considered - HgCdTe and InAsSb ternary alloys, and type-II InAs/GaSb superlattice. Recently, advanced heterojunction photovoltaic detectors have been developed. Novel HOT detector designs, so called interband cascade infrared detectors, have emerged as competitors of HgCdTe photodetectors.

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Modeling of HgCdTeLWIR detector for high operation temperature conditions

Martyniuk P., Gawron W., Madejczyk P., Rogalski A., Piotrowski J.

Metrology and Measurement Systems

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2013

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Vol. 20, nr 2

159--170

EN

The paper reports on the photoelectrical performance of the long wavelength infrared (LWIR) HgCdTe high operating temperature (HOT) detector. The detector structure was simulated with commercially available software APSYS by Crosslight Inc. taking into account SRH, Auger and tunnelling currents. A detailed analysis of the detector performance such as dark current, detectivity, time response as a function of device architecture and applied bias is performed, pointing out optimal working conditions.