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1
Content available SiGe HBT wideband amplifier for millimeter wave applications
Krcmar M., Noether N., Boeck G.
Journal of Telecommunications and Information Technology
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2007
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nr 1
8-12
EN
A wideband amplifier up to 50 GHz has been implemented in a 0.25 žm, 200 GHz ft SiGe BiCMOS technology. Die size was 0.7×0.73 mm2. The two-stage design achieves more than 11 dB gain over the whole 20 to 50 GHz band. Gain maximum was 14.2 dB at 47.5 GHz. Noise figure was lower than 9 dB up to 34 GHz and a current of 30 mA was drawn from a 4 V supply. To the author's best knowledge this is the highest gain bandwidth product of a monolithic SiGe HBT amplifier ever reported.
2
Content available Preliminary results on direct photon-photon HBT measurements in square root sNN = 62.4 GeV and 200 GeV Au+Au collisions at RHIC
Das D., Lin G., Chattopadhyay S., Chikanian A., Finch E., Nayak T., Panitkin S., Sandweiss J., Suaide A., Zhang H.
Nukleonika
|
2006
|
Vol. 51,suppl.3
55--58
EN
We present the preliminary results on direct photon interferometry measurements in Au+Au collisions at square root sNN = 62.4 GeV and 200 GeV using the STAR (solenoidal tracker at RHIC) detector. Photons are reconstructed via e+/e- conversions in STAR Time Projection Chamber (TPC) and energy deposited by photons in STAR Barrel Electromagnetic Calorimeter (BEMC). The two-photon correlations are measured using (1) both photons measured with BEMC; (2) one photon from conversions and the other measured with BEMC. Both the methodologies and the possible constraints in the correlation function measurements are discussed.
3
Content available Effect of hard processes on momentum correlations in pp and p(anti)p collisions
Paić G., Skowroński P.
Nukleonika
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2006
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Vol. 51,suppl.3
83-87
EN
The HBT radii extracted in pp and pp collisions at SPS and Tevatron show a clear correlation with the charged particle rapidity density. We propose to explain the correlation using a simple model where the distance from the initial hard parton-parton scattering to the hadronization point depends on the energy of the partons emitted. Since the particle multiplicity is correlated with the mean energy of the partons produced we can explain the experimental observations without invoking scenarios that assume a thermal fireball. The model has been applied with success to the existing experimental data both in the magnitude and the intensity of the correlation. The model has also been extended to pp collisions at the LHC energy of 14 TeV. The possibilities of a better insight into the string spatial development using 3D HBT analysis are discussed.
4
Content available Baryon-baryon correlations in Au+Au collisions at square root sNN = 62 GeV and square root sNN = 200 GeV, measured in the STAR experiment at RHIC
Gos H.
Nukleonika
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2006
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Vol. 51,suppl.3
59-63
EN
Particle correlations at small relative velocities can be used to study the space-time evolution of hot and expanding system created in heavy-ion collisions. Baryon and antibaryon source sizes extracted from baryon-baryon correlations complement the information deduced from the correlation studies of identical pions. Correlations of nonidentical particles are sensitive also to the space-time asymmetry of their emission. High statistics data set of STAR experiment allows us to present the results of baryon-baryon correlation measurements at various centralities and energies, as well as to take carefully into account the particle identification probability and the fraction of primary baryons and antibaryons. Preliminary results show significant contribution of annihilation channel in baryon-antibaryon correlations.
5
Krzemogerman SiGe w mikroelektronice
Łukasiak L., Jakubowski A., Beck R. B., Pióro Z.
Elektronika : konstrukcje, technologie, zastosowania
|
2006
|
Vol. 47, nr 4
34-37
PL
Przedstawiono korzystne właściwości materiałowe krzemogermanu oraz jego zastosowanie w przyrządach półprzewodnikowych, takich jak tranzystor bipolarny (baza) oraz tranzystor MOS.
EN
In this paper advantageous material properties of silicon-germanium are presented as well as the application of SiGe in semiconductor devices, such as: bipolar transistor (base) and MOSFET (channel, gate, source and drain contacts).
6
Content available Study of influence of particle identification in ALICE detectors and resonance decays on correlation functions
Malinina L., Batyunya B., Zaporozhets S.
Nukleonika
|
2004
|
Vol. 49,suppl.2
99-102
EN
The information about dynamics of the collective expansion of the source created in heavy ion collisions can be extracted by using intensity interferometry in different regions of rapidity and transverse momentum (pt). The study of different factors affecting the pt-dependence of the radii and the strength of the correlation is necessary and that is why we have studied the influence of the particle identification efficiency and the presence of the pions from resonance decays on (pi+,pi+) correlation function measured by ALICE experiment.
7
Content available Stable Bose-Einstein correlations
Csörgo T., Hegyi S., Zajc W.
Nukleonika
|
2004
|
Vol. 49,suppl.2
7-10
EN
The shape of Bose-Einstein (or HBT) correlation functions is determined for the case when particles are emitted from a stable source, obtained after convolutions of large number of elementary random processes. The two-particle correlation function is shown to have a stretched exponential shape, characterized by the Lévy index of stability 0 < alfa less-than or equal to 2 and the scale parameter R. The normal, Gaussian shape corresponds to a particular case, when alfa = 2 is selected. The asymmetry parameter of the stable source, beta is shown to be proportional to the angle, measured by the normalized three-particle cumulant correlations.
8
Content available Pion interferometry in Au+Au collisions at square root sNN = 200 GeV
Noriega M.
Nukleonika
|
2004
|
Vol. 49,suppl.2
67-70
EN
We present preliminary results from a two-pion intensity interferometry analysis from Au+Au collisions at square root sNN = 200 GeV measured in the STAR detector at RHIC. The dependence of the apparent pion source on multiplicity and transverse momentum are discussed and compared with preliminary results from d+Au and p+p collisions at the same beam energy.
9
Content available Particle correlations to be seen by ALICE
Pluta J., Chajęcki Z., Gos H., Skowroński P.
Nukleonika
|
2004
|
Vol. 49,suppl.2
103-108
EN
The possibilities of ALICE experiment in measurements of particle correlations are estimated by computer simulations. A dedicated software has been created with the aim to study the influence of different experimental factors on the shape of correlation functions and with the intention to serve in the future for the analysis of real data. A scheme of correlation analysis is described shortly and some of the first results are presented. This analysis is being performed in the frame of ALICE "Physics Performance Report".
10
Content available How to model BEC numerically?
Utyuzh O., Wilk G., Włodarczyk Z.
Nukleonika
|
2004
|
Vol. 49,suppl.2
33-35
EN
A new method for numerical modelling of Bose-Einstein correlations observed in all kinds of multiparticle production processes is proposed.
11
Content available Effect of hard processes on momentum correlations
Paić G., Skowroński P., Tomašik B.
Nukleonika
|
2004
|
Vol. 49,suppl.2
89-94
EN
The effect of hard processes to be encountered in HBT studies at the Large Hadron Collider (LHC) have been studied. A simple simulation has allowed us to generate momentum correlations involving jet particles as well as particles originating from the kinetic freeze-out and to compare them to a simple theoretical model which has been developed. The first results on the effect of hard processes on the correlation function for the case of jet quenching are presented.
12
Content available Azimuthally-sensitive interferometry and the source lifetime at RHIC
Lisa M.
Nukleonika
|
2004
|
Vol. 49,suppl.2
71-76
EN
Pion interferometry (HBT) measurements relative to the reaction plane provide an estimate of the transverse source anisotropy at freeze-out, which probes the system dynamics and evolution duration. Measurements by the STAR Collaboration indicate that the source is extended increasingly out-of-plane with increasing impact parameter, suggesting a short evolution duration roughly consistent with estimates based on azimuthally-integrated HBT measurements.
13
Content available Recent developments in vertical MOSFETs and SiGe HBTs
Hall S., Buiu O., Ashburn P., de Groot K.
Journal of Telecommunications and Information Technology
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2004
|
nr 1
26-35
EN
There is a well recognised need to introduce new materials and device architectures to Si technology to achieve the objectives set by the international roadmap. This paper summarises our work in two areas: vertical MOSFETs, which can allow increased current drive per unit area of Si chip and SiGe HBT's in silicon-on-insulator technology, which bring together and promise to extend the very high frequency performance of SiGe HBT's with SOI-CMOS.
14
Content available Modeling SiGe-base HBT using APSYS 2000 - a 2D simulator
Linkowski A., Łukasiak L., Jakubowski A.
Journal of Telecommunications and Information Technology
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2004
|
nr 1
36-38
EN
The paper is devoted to optimization of SiGe-base HBT with respect to operation speed by means of numerical simulation. The influence of design parameters on f(T) is studied.
15
Content available Evolution and recent advances in RF/microwave transistors
Liou J.J., Schwierz F.
Journal of Telecommunications and Information Technology
|
2004
|
nr 1
99-105
EN
Most applications for radio frequency/microwave (thereafter called RF) transistors had been military oriented in the early 1980s. Recently, this has been changed drastically due to the explosive growth of the markets for civil wireless communication systems. This paper gives an overview on the evolution, current status, and future trend of transistors used in RF electronic systems. Important background, development and major milestones leading to modern RF transistors are presented. The concept of heterostructure, a feature frequently used in RF transistors, is discussed. The different transistor types and their figures of merit are then addressed. Finally an outlook of expected future developments and applications of RF transistors is given.
16
Modelowanie wpływu parametrów tranzystora HBT z bazą SiGe na prędkość nośników w bazie przy użyciu symulatora APSYS 2000
Linkowski A., Łukasiak L., Jakubowski A.
Elektronika : konstrukcje, technologie, zastosowania
|
2004
|
Vol. 45, nr 10
24-25
PL
Analiza wpływu domieszkowania i zawartości Ge w bazie tranzystora HBT z bazą SiGe na prędkość nośników w bazie przy użyciu symulatora przyrządów półprzewodnikowych APSYS 2000.
EN
The influence of such SiGe-base HBT parametrs, as doping and Ge content in the base, on the carrier velocity in the base is studied using APSYS 2000 simulator.
17
Tranzystory mikrofalowe : technologia, parametry i zastosowania
Wojtasiak W.
Elektronika : konstrukcje, technologie, zastosowania
|
2002
|
Vol. 43, nr 7/8
32-34
PL
Przedstawiono przegląd najnowszych osiągnięć technologii półprzewodników w zakresie produkcji tranzystorów mikrofalowych. Analiza parametrów i możliwości zastosowań tranzystorów mikrofalowych została oparta na własnych badaniach eksperymentalnych realizowanych w ramach projektu KBN nr 7 T11B 044 20. Zaprojektowano i wykonano szereg takich układów jak: generatory VCO, syntezery PLL/DDS, wzmacniacze nadawcze dużej mocy oraz odbiorcze - niskoszumne (LNA). W projektach wykorzystano opracowane modele tranzystorów, które uwzględniają efekty temperaturowe symulowane metodą FDTD-3D.
EN
In this paper, the overview of microwave transistors technology performances is presented. The parameters and properties of the chosen transistors based on self-investigations and designs were analysed. For this purpose, a lot of circuits such as: VCOs, high power amplifiers and LNAs were designed. The self-invented temperature models based on 2D and 3D FDTD method for thermal problems were applied.
18
Content available Silicon-germanium for ULSI
Hall S., Eccleston B.
Journal of Telecommunications and Information Technology
|
2000
|
nr 3-4
3-9
EN
The paper describes recent progress for the introduction of silicon-germanium, bipolar and field effect heterostructure transistors into mainstream integrated circuit application. Basic underlying concepts and device architectures which give rise to the desired performance advantages are described together with the latest state-of the-art results for HBT and MOSFET devices. The integration of such devices into viable HBT, BiCMOS and CMOS is reviewed. Other contributions that SiGe can make to enhance the performance of ULSI circuits are mentioned also.
19
Content available CVD growth of high speed SiGe HBTs using SiH4
Radamson H.H., Grahn J., Landgren G.
Journal of Telecommunications and Information Technology
|
2000
|
nr 3-4
10-14
EN
The growth of high frequency HBT structures using silane-based epitaxy has been studied. The integrity of SiGe layers in the base and the control of the collector profile using As- or P-doping grown at 650°C have been investigated. The results showed that the growth rate of SiGe layers has a strong effect on the evolution of defect density in the structure. Furthermore, B-doped SiGe layers have a higher thermal stability compared to undoped layers. The analysis of the collector profiles showed a higher incorporation of P in silane-based epitaxy compared to As. Meanwhile, the growth of As- or P-doped layers on the patterned substrates suffered from a high loading effect demanding an accurate calibration.
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