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2 Materials Science Poland

2 2016

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Pressure dependence of the band gap energy for the dilute nitride GaNxAs1−x

Zhao C.-Z., Wei T., Sun X.-D., Wang S.-S., Lu K.-Q.

Materials Science Poland

2016

Vol. 34, No. 4

881--885

A model is developed to describe the pressure dependence of the band gap energy for the dilute nitride GaNxAs1-x. It is found that the sublinear pressure dependence of E- is due to the coupling interaction between E+ and E-. We have also found that GaNxAs1-xneeds much larger pressure than GaAs to realize the transition from direct to indirect band gap. It is due to two factors. One is the coupling interaction between the E+ and E-. The other is that the energy difference between the X conduction band minimum (CBM) and the G CBM in GaNxAs1-x is larger than that in GaAs. In addition, we explain the phenomenon that the energy difference between the X CBM and the G CBM in GaNxAs1-xis larger than that in GaAs. It is due to the impurity-host interaction.

Characterization of deep-level defects in GaNAs/GaAs heterostructures grown by APMOVPE

Gelczuk Ł., Dąbrowska-Szata M., Ściana B., Pucicki D., Radziewicz D., Kopalko K., Tłaczała M.

Materials Science Poland

2016

Vol. 34, No. 4

726--734

Conventional deep level transient spectroscopy (DLTS) and high-resolution Laplace DLTS techniques were used to study electrical properties of deep-level defects in dilute GaNAs epitaxial layers grown by atmospheric-pressure metalorganic vapourphase epitaxy (APMOVPE) on the GaAs substrate. Three samples with nitrogen concentrations of 1.2 %, 1.6 % and 2.7 % were investigated. In DLTS and LDLTS spectra of the samples, four predominant electron traps were observed. On the basis of the obtained electrical parameters and previously published results, one of the traps was associated with N-related complex defects, while the other traps with common GaAs-like native defects and impurities, called EL6, EL3 and EL2.