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Morphology, structural and absorption studies on gallium nitride powder

Nyk M., Stręk W., Jabłoński J. M., Misiewicz J.

Materials Science Poland

2004

Vol. 22, No. 3

235--240

A simple method of synthesis of nanocrystalline GaN powders is presented. The morphology and structure of the powders was characterized by XRD and TEM methods. It was observed that the sizes of single grains of gallium nitride depend on parameters of the technological process. Using the Sherrer's rule, the sizes of crystallites were determined to be in the range of 14-33 nm. It was found that a and c parameters of hexagonal gallium nitride slightly depend on the crystallite size. Changes of the absorption edge and Urbach energies are presented.