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In-plane uniaxial anisotropy rotations in (Ga,Mn)As thin films

Sawicki M., Wang K.-Y., Edmonds K.W., Campion R.P., Staddon C.R., Farley N.R.S., Foxon C.T., Dietl T., Gallagher B.L.

Materials Science Poland

2006

Vol. 24, No. 3

627--631

Using SQUID magnetometry we find that in (Ga,Mn)As films the in-plane uniaxial magnetic easy axis is consistently associated with particular crystallographic directions. It can be rotated from the [-110] direction to the [110] direction by low temperature annealing and we show that this change is hole density related. We demonstrate that the magnitude of uniaxial anisotropy as well its dependence on the hole-concentration and temperature can be explained in terms of the p-d Zener model of the ferromagnetism assuming a small trigonal-like distortion.

How to make GaMnAs with high ferromagnetic phase transition temperature?

Sadowski J., Domagała J. Z., Kanski J., Rodriguez C. H., Terki F., Charar S., Maude D.

Materials Science Poland

2006

Vol. 24, No. 3

617--625

We analyze the role of structural defects in GaMnAs and demonstrate how their density can be drastically reduced by in situ post-growth annealing under As capping. Modifications of the magnetic, transport and structural properties of the annealed GaMnAs layers are presented. The main result is that the Curie temperatures are strongly increased relative those of the as-grown layers, from typically 70 - 80 K to 150 - 160 K. The annealed layers exhibit well-ordered smooth surfaces, suitable for further epitaxial overgrowth.

Ferromagnetyzm cienkich warstw i supersieci GaMnAs/GaAs

Sadowski J., Kanski J., Karlsteen M., Svedlindh P., Mathieu R., Domagała J. Z., Bąk-Misiuk J.

Elektronika : konstrukcje, technologie, zastosowania

2001

Vol. 42, nr 8-9

7-11

GaMnAs is a semiconductor exhibiting low temperature (below 110 K) ferromagnetic phase transition caused by interactions of carriers (holes) with Mn spins. The paper presents properties of thin GaMnAs layers with Mn conaAs spacer. This dependence is presented for structures with two different thickness of GaMnAs layers - 12 and 16 molecular layers (34 Å and 45 Å). In both cases the ferromagnetism in GaMnAs/GaAs superlattice structures was not observed ofor GaAs spacer layer thickness bigger than 9 molecular layers (25 A). This is tentatively explained by the thickness dependent profile of concentration of carriers (holes) in GaMnAs.