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1 Opto-Electronics Review

1 2008

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Analysis of anticipated performance of 650-nm GaInP/AlGaInP quantum-well GaAs-based VCSELs at elevated temperatures

Piskorski Ł., Sarzała R. P., Nakwaski W.

Opto-Electronics Review

2008

Vol. 16, No. 1

34-41

The possibility of application of the 650-nm oxide-confined GaInP/AlGaInP quantum-well vertical cavity surface-emitting diode lasers (VCSELs) at elevated temperatures as sources of the carrier 650-nm wave in the fibre optical communication using POFs has been investigated with the aid of the comprehensive self-consistent model. An increase in the VCSEL threshold current at higher temperatures has been found to be mostly associated with both the carrier leakage from the valley of the Ga₀.₄₃In₀.₅₇P quantum-well material to the X-valley of the (Al₀.₆₇Ga₀.₃₃)₀.₅₂In₀.₄₈P barriers and the band-to-band absorption within the Ga₀.₅₂In₀.₄₈P layer of the band-gap comparable with the energy of emitted radiation. Nevertheless, the AlGaInP VCSELs exhibit encouraging thermal behaviour with the characteristic temperature T₀ equal to as much as 134 K for the active-region temperatures up to 357 K. For the 5-µm devices, the maximal achievable output has been determined to decrease from a quite high value of 1.0 mW for 293 K to 0.6 mW for 320 K and to still high 0.33 mW for 340 K. However, an efficient operation of the above VCSEL at elevated temperatures requires still some structure modifications leading to a reduction of both the above effects, the electron leakage from the valley and the band-to-band absorption within GaInP layers.