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1 Materials Science Poland

1 2019

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Influence of Bi on dielectric properties of GaAs1−xBix alloys

Ulutas K., Yakut S., Bozoglu D., Deger D., Arslan M., Erol A.

Materials Science Poland

2019

Vol. 37, No. 2

244--248

Pure GaAs and GaAs1−xBix alloys with different Bi ratios (1 %, 2.5 %, 3.5 %) fitted with silver contacts were measured with a dielectric spectroscopy device. Dielectric characterization was performed at room temperature in the frequency range of 0.1 Hz to 1 MHz. GaAs exhibits three relaxation regions corresponding to space-charge, dipolar and ionic polarizations in sequence with increasing frequency while GaAs1−xBix samples show only a broad dipolar polarization in the same frequency range. This result proves the filling of the lattice with Bi through making a new bonding reducing the influence of ionic polarization. This finding supports the previous results concerning optical properties of GaAs1−xBix, presented in the literature.