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2 Opto-Electronics Review

2 2011

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Determination of energy difference and width of minibands in GaAs/AlGaAs superlattices by using Fourier transform photoreflectance and photoluminescence

Motyka M., Janiak F., Misiewicz J., Wasiak M., Kosiel K., Bugajski M.

Opto-Electronics Review

2011

Vol. 19, No. 2

151-154

In this work, Fourier transform photoreflectance (in a form of fast differential reflectance spectroscopy) has been used to study the interband optical transitions in molecular beam epitaxially grown GaAs/AlGaAs superlattices. The dependence of the measured features on the growth parameters (QW and barrier widths) has been studied. The minibands widths and energy differences between them have been obtained and matched to these coming from effective mass calculations. In addition, it has been shown that Fourier transform photoluminescence measurement might be used in the far infrared region (up to ∼15 µm) to the direct detection of the energies of intraband transitions between the electron minibands (subbands) in the superlattice and QW system.

Above GaSb barrier in type II quantum well structures for mid-infrared emission detected by Fourier-transformed modulated reflectivity

Motyka M., Janiak F., Ryczko K., Sęk G., Misiewicz J., Bauer A., Weih R., Höfling S., Kamp M., Forchel A.

Opto-Electronics Review

2011

Vol. 19, No. 2

137-139

Modulation spectroscopy in its Fourier-transformed mode has been employed to investigate the optical properties of broken gap 'W'-shaped GaSb/AlSb/InAs/InGaSb/InAs/AlSb/GaSb quantum well structures designed to emit in the mid infrared range of 3-4 µm for applications in laser-based gas sensing. Besides the optical transitions originating from the confined states in the type II quantum wells, a number of spectral features at the energy above the GaSb band gap have been detected. They have been analyzed in a function of InAs and GaSb layer widths and ultimately connected with resonant states in the range of AlSb tunneling barriers.