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Hydrogen sensor based on field effect transistor with C–Pd layer

Firek Piotr, Krawczyk Sławomir, Wronka Halina, Czerwosz Elżbieta, Szmidt Jan

Metrology and Measurement Systems

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2020

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Vol. 27, nr 2

313--321

EN

ISFET (Ion Sensitive Field Effect Transistors) microsensors are widely used for pH measurements as well as analytical and biomedical applications. At the same time, ISFET is a good candidate for testing various materials for their applications in sensitive membranes. For example, hydrogen sensitive carbonaceous films containing Pd nanocrystallites (C-Pd) make this material very interesting for sensor applications. A cost effective silicon technology was selected to fabricate n-channel transistors. The structures were coupled to specially designed double-sided PCB (Printed Circuit Board) holder. The holder enables assembly of the structure as part of an automatic stand. The last step of production of MIS structures was deposition of the C-Pd layer. The C-Pd films were fabricated by the Physical Vapor Deposition (PVD) method in which C60 and palladium acetate were evaporated. Electrical resistance of structures with C-Pd films was measured during their interaction with hydrogen. Finally, a new type of highly sensitive FET hydrogen sensor with C-Pd layer was demonstrated and characterized.

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Historia tranzystora polowego, początki i geneza powstania

Czupryniak J., Namirowska P., Ossowski T.

Technical Issues

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2017

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nr 1

28--33

EN

Automation diagnostic methods and techniques of environmental monitoring combined with higher precision, sensitivity and selectivity of the currently available detection methods evokes a growing interest of medicine and medical diagnostics to produce the miniaturized diagnostic devices and technology which enable automation of medical procedures. Application of different sensors including chemical ones for detecting substance such as: peptides, proteins, ions, heavy metals in biological systems in which is low concentration of analyte is observed, forces us to use a miniaturized chemical nanosensors with high sensitivity and selectivity. This type of sensors are FET, ISFET and MOSFET. The nano-diagnostic devices with ability of molecular recognition that’s today's world most important analytical challenge for designers and chemists in order to obtain rapid and cheap diagnostic methods. In this paper we present the principle of FET and the genesis of the measuring system.

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Stability of two-DOF systems with clearances using FET

Kranjčević N., Stegic M., Vranković N.

Computer Assisted Mechanics and Engineering Sciences

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2007

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Vol. 14, No. 1

1-11

EN

The finite element in time method (FET) is a fast and reliable implicit numerical method for obtaining steady state solutions of the periodically forced dynamical systems with clearances. Delineation of the stable and unstable solutions could help in predicting regular and chaotic motions of such dynamical systems and transitions to either type of response. Stability of the FET solutions can be investigated via the Floquet theory, without any special effort for calculating the monodromy matrix. The applicability of the stability analysis is demonstrated through the study of two-degree-of-freedom systems with clearances. Close agreement is found between obtained results and published findings of the harmonic balance method and the piecewise full decoupling method.