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1 2003

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Fabrication of thin film polycrystalline CIS photovoltaic heterostructure

Pisarkiewicz T., Jankowski H., Schabowska-Osiowska E., Maksymowicz L. J.

Opto-Electronics Review

2003

Vol. 11, No. 4

297--304

Manufacturing processes and investigation of properties of thin film materials forming the CulnSe2 (CIS) solar cell have been described. The cell consisted of the following layers: glassl Mol p-CulnSe2/n-CdS/n⁺-ZnO/. CIS absorbers were obtained by pulse magnetron sputtering of metallic targets in argon yielding the multilayer precursors structures which were successively chalcogenised in selenium vapours. Cadmium sulfide buffer layer was manufactured by chemical bath deposition (CBD) method which offers the films with optimal properties. Window zinc oxide layers were obtained by RF magnetron sputtering of metallic Zn:Al target in oxygen reactive atmosphere. Thin film CIS solar cells with the efficiencies of the order of 6% have been produced. Further improvement in technology leading to CIS cells with better parameters have been discussed.