Preferencje help
Widoczny [Schowaj] Abstrakt
Liczba wyników

Znaleziono wyników: 2

Liczba wyników na stronie
first rewind previous Strona / 1 next fast forward last
Wyniki wyszukiwania
Wyszukiwano:
w słowach kluczowych:  CuInS2
help Sortuj według:

help Ogranicz wyniki do:
first rewind previous Strona / 1 next fast forward last
1
Content available Quantum dots for temperature sensing
EN
Quantum dots are three-dimensional nanoparticles of semiconductors with typical sizes ranging from 2 to 10 nm. Due to the quantum confinement effect the energy gap increase with the size decreasing resulting in size-depended and fine-tunable optical characteristics. Besides this, the energy structure of a quantum dot with a certain size is highly sensitive to environmental conditions. These specific properties open a wide range of applications starting from optical and optoelectronic devices and ending with biosensing and life science. Temperature is one of those parameters influencing strongly on the optical properties of semiconductor nanocrystals, which make them promising materials for temperature sensing, more often using a fluorescent response. Compared to the conventional organic dyes already applied in this field, quantum dots exhibit a set of advantages, such as high quantum yield and photostability, long fluorescence lifetime, higher Stokes shift, and ability to surface functionalization with targeted organic molecules aimed to provide them biocompatibility. In this review, we briefly discuss the properties of II-VI and assumingly less toxic I-III-VI quantum dots, mechanisms of temperature-induced fluorescence response, and the feasibility of their practical application in the field of thermal sensing.
2
Content available remote Optimization of deposition temperature of SILAR Cu-rich CuInS2 thin films
EN
CuInS2 (CIS) is studied widely as a promising absorber material for high efficient and low cost thin film solar cells. CIS thin films are prepared on soda lime glass substrates using Successive Ionic Layer Adsorption and Reaction (SILAR) technique at different deposition temperatures (40 to 70 °C). The structural, compositional and optical properties are studied with x-ray diffractometer, energy dispersive x-ray analyzer and spectrophotometer. The influence of the deposition temperature on the properties of CIS thin films is discussed in this paper in detail.
first rewind previous Strona / 1 next fast forward last
JavaScript jest wyłączony w Twojej przeglądarce internetowej. Włącz go, a następnie odśwież stronę, aby móc w pełni z niej korzystać.