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2 Materials Science Poland

2 2015

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Structure of AlN films deposited by magnetron sputtering method

Nowakowska-Langier K., Chodun R., Zdunek K., Minikayev R., Nietubyć R.

Materials Science Poland

2015

Vol. 33, No. 3

639--643

AlN films on a Si substrate were synthesized by magnetron sputtering method. A dual magnetron system operating in AC mode was used in the experiment. Processes of synthesis were carried out in the atmosphere of a mixture of Ar/N2. Morphology and phase structure of the AlN films were investigated at different pressures. Structural characterizations were performed by means of SEM and X-ray diffraction methods. Our results show that the use of magnetron sputtering method in a dual magnetron sputtering system is an effective way to produce AlN layers which are characterized by a good adhesion to the silicon substrate. The morphology of the films is strongly dependent on the Ar/N2 gas mixture pressure. An increase of the mixture pressure is accompanied by a columnar growth of the layers. The films obtained at the pressure below 1 Pa are characterized by finer and compacter structure. The AlN films are characterized by a polycrystalline hexagonal (wurtzite) structure in which the crystallographic orientation depends on the gas mixture pressure.

Methods of optimization of reactive sputtering conditions of Al target during AlN films deposition

Chodun R., Nowakowska-Langier K., Zdunek K.

Materials Science Poland

2015

Vol. 33, No. 4

894--901

Encouraged by recent studies and considering the well-documented problems occurring during AlN synthesis, we have chosen two diagnostic methods which would enable us to fully control the process of synthesis and characterize the synthesized aluminum nitride films. In our experiment we have compared the results coming from OES measurements of plasma and circulating power characteristics of the power supply with basic features of the deposited layers. The dual magnetron system operating in AC mode was used in our studies. Processes of aluminum target sputtering were carried out in an atmosphere of a mixture of argon and nitrogen. The plasma emission spectra were measured with the use of a monochromator device. Analyses were made by comparing the positions and intensities of spectral lines of the plasma components. The results obtained allowed us to characterize the sputtering process under various conditions of gas mixture compositions as well as power distribution more precisely, which is reported in this work. The measured spectra were related to the deposition rate, the structure morphology of the films and chemical composition. Our work proved that the use of plasma OES and circulating power measurements make possible to control the process of sputtering and synthesis of deposited films in situ.