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Morfologia tlenku cynku domieszkowanego jonami glinu otrzymywanego metodą hydrotermalną oraz kondensacji próżniowej.

Strachowski T., Piticescu R.R., Monty C.J., Łojkowski W., Pielaszek R., Grzanka E., Presz A.

Szkło i Ceramika

2006

R. 57, nr 3

7-13

Celem pracy jest opisanie morfologii tlenku cynku domieszkowanego jonami glinu otrzymanego metodą hydrotermalną i kondensacji próżniowej. Kształt i wielkość ziaren analizowane były metodą SEM (Scanning Electron Microscopy), XRD (X-ray Diffraction). Analiza gęstości oraz wyznaczenie stałych sieciowych na podstawie analizy XRD pozwoliły zaobserwować jak zmieniają się te parametry wraz ze wzrostem zawartości jonów glinu.

The aim of this work is description of morphology of Al-doped ZnO obtained by the hydrothermal and vapour condensation method. The morphology was analysed by complementary methods. Shape and grain size were analysed by SEM (Scanning Electron Microscopy) and XRD (X-ray Diffraction). Density measurements used helium pycnometer method. Dependence of density and lattice parameters on Al concentration is presented.

ZnO thin films prepared by high pressure magnetron sputtering

Czternastek H.

Opto-Electronics Review

2004

Vol. 12, No. 1

49--52

Undoped and Al-doped ZnO films were prepared by a high pressure dc magnetron sputtering technique on glass substrates at a temperature of 470 K. Plasma-emission monitoring was used to stabilize oxygen flow to the deposition chamber. The effect of the total pressure during deposition and doping level on the structural, electrical and optical properties of the films was investigated. No preferred orientation was observed in the case of films prepared at low pressures. ZnO films deposited at a total pressures above 5 Pa and with a doping level up to 3 at.% Al had highly oriented crystallites with a c-axis normal to the substrate. These films with the electrical resistivity of 2×10⁻³ Ω cm and the rms roughness of about 20 nm exhibited an average transmission of 81% over the visible range. At higher doping levels the preferred orientation gradually disappeared, the carrier concentration increased by a small amount, but the Hall mobility decreased drastically because of the ionised impurity scattering and the lack of oriented growth.