Quantum well solar cell with GaAs wells and AlxGa1-xAs barriers was optimized. Particular emphasis was placed on enhancing the efficiency. Open-circuit voltage, short-circuit current density, fill factor have been also optimized. Many simulations of various structures were carried out. The conversion efficiency exceeding 27% was obtained. The algorithm of structures optimization that gives comprehensive information about solar cells parameters in a short time was shown. Spectral characteristics, efficiency of energy conversion as a function of light concentration, temperature and the geometrical and materials parameters of the solar cells structures were determined. These results are compared with nearly identical p-i-n solar cells: i) the first with /-region made from undoped GaAs (well material) and ii) the second with /-region from A0.1Ga0.9As (barrier material).
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Up to now research on functionally graded materials (FGM) was focused on their mechanical and strength properties. The paper presents a review of possible applications of AIII-BV group materials with graded composition for optoelectronic devices, such as p-i-n diodes, heterojunction photodetectors and lasers. Nowadays, there are no optoelectronic devices fabricated from FGM. The theoretical simulation showed that devices with FGM active region would have superior characteristics compared with classical constructions.
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