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1 2005

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Piezoelectric effect and spontaneous polarization in computer modelling of AIII--N heterostructures

Piasecki T., Kośnikowski W., Paszkiewicz B.

Optica Applicata

2005

Vol. 35, nr 3

597-604

The Ga, Al and In nitrides (AIII--N) are complete material system suitable in high power and high temperature electronic devices such as AlxGa1-xN/GaN heterostructure field effect transistor (HFET). The examples of computer modelling of AIII--N heterostructures were shown. AIII--N materials exhibit strong piezoelectric and spontaneous polarization. The computer modelling results showing the influence of layer polarity on carrier distribution in AlxGa1-xN/GaN heterostructure were shown. Only in Ga-faced heterostructures 2-dimensional electron gas (2DEG) is formed. The effect of AlxGa1-xN layer relaxation on 2DEG concentration in AlxGa1-xN/GaN heterostructure was examined. The difference in spontaneous polarization in AlxGa1-xN and GaN caused high 2DEG concentration even in AlxGa1-xN/GaN heterostructures with relaxed Alx-Ga1-xN layer. Polarization field in AlxGa1-xN layer in AlxGa1-xN/GaN heterostructure was enough for achieving high 2DEG concentrations in undoped heterostructure. Strained AlxGa1-xN layer was introduced into typical HFET heterostructure. GaN layer above an interlayer was depleted and the negative influence of using non semi-insulating GaN layer in HFET transistor was reduced.