The lithography is a main technology process which determines the properties of semiconductor devices. The resolution of optical lithography is insufficient for creation of submicrometer patterns, like, e.g., gate electrode in HEMT transistors. Thus, a novel technique that uses AFM technique and common photolithography was proposed. In the paper, the results of nanoscratching lithography were presented and discussed. Also the transmission and root mean square of thin metal films measurements were summarized.
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The lithography is a basic operation in the fabrication process of semiconductor devices. The scaling ability is the reason why the atomic force microscopy (AFM) nanolithograpy is currently studied in many laboratories. In the paper, the results of the mechanical AFM lithography, named nanoscribing or nanoscratching, are presented. In this method, the pattern is created by mechanical interaction between the AFM tip and a sample. This interaction requires the application of large forces in micronewtons scale.
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