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Simulation framework and thorough analysis of the impact of barrier lowering on the current in SB-MOSFETs

Schwarz M., Calvet L. E., Snyde J. P., Krauss T., Schwalke U., Kloes A.

International Journal of Microelectronics and Computer Science

2017

Vol. 8, nr 2

72--79

In this paper we present a simulation framework to account for the Schottky barrier lowering models in SBMOSFETs within the Synopsys TCAD Sentaurus tool-chain. The improved Schottky barrier lowering model for field emission is considered. A strategy to extract the different current components and thus accurately predict the on- and off-current regions are adressed. Detailed investigations of these components are presented along with an improved Schottky barrier lowering model for field emission. Finally, a comparison for the transfer characteristics is shown for simulation and experimental data.

Two-Dimensional Analytical Model for Channel Lenght Modulation in Lightly-Doped DG FETs

Weidemann M., Kloes A., Schwarz M., Iniguez B.

Electronics and Telecommunications Quarterly

2009

Vol. 55, No 4

549-562

With this paper we publish a possibility to calculate the shortening of the channel in SOI DoubleGate FETs operating in saturation with a 2D analytical solution of Poisson's equation. The model inherently includes 2D effects by solving the differential equation with conformai mapping technique and does not introduce unphysical fitting parameters. Also these fitting parameters have only a minor influence on the model results. We compared our model to numerical data based on TCAD Sentaurus simulations and it is in good agreement with the results.