Wyniki wyszukiwania - BazTech

Ograniczanie wyników

1 Optica Applicata

1 2007

Znaleziono wyników: 1

Liczba wyników na stronie

Wyniki wyszukiwania

Wyszukiwano:
w słowach kluczowych: (In,Ga)(As,N)

Sortuj według:

Ogranicz wyniki do:

Technology and characterization of p-i-n photodetectors with DQW (In,Ga)(As,N)/GaAs active region

Pucicki D., Zborowska-Lindert I., Ściana B., Radziewicz D., Boratyński B.

Optica Applicata

2007

Vol. 37, nr 4

415-421

Double quantum well (DQW) (In,Ga)(As,N)/GaAs p-i-n photodetectors, grown by solid source molecular beam epitaxy using a radio-frequency plasma source for nitrogen with absorption for wavelengths above 870 nm have been investigated. The active region of the photodetectors contained two very thin absorption layers: 10.5 nm Ga(As,N) (structure #DP02) or 4 nm (In,Ga)(As,N) (#DP03). In spite of this, photodetectors exhibited high sensitivity (0.0525 A/W for 980 nm) for wavelength greater than the absorption edge of GaAs (870 nm). The dark current of photodetectors did not exceed 0.1 žA.