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Maintenance-guarantee for prolonging the lifespan of fluid Power installations

Cristescu C., Kędzia K., Dumitrescu C., Radoi R.

Hydraulika i Pneumatyka

2013

nr 1

14--18

Calculations of the stress induced by silicon lattice contraction after baron and phosporus doping

Iovan S., Radoi R.

Electron Technology

2000

Vol. 33, No. 4

597-599

The aim of this paper is to determine the silicon lattice's contraction index after boron and phosphorus doping. This stress factor was determined theoretically and experimentally from the doped wafers curvature. Both theoretical and experimental results are in agreement with the literature.