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Development of the hybrid distributed Bragg reflectors for mid-infrared applications

Mikulicz Monika, Badura Mikołaj, Rygała Michał, Smołka Tristan, Macherzyński Wojciech, Łozińska Adriana, Motyka Marcin

Opto-Electronics Review

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2024

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Vol. 32, No. 1

art. no. e149168

EN

In this study, an analysis of the optical performance of two types of distributed Bragg reflector structures based on GaAs and InP material systems was carried out. The structures were designed for maximum performance at 4 μm with their reflectivity achieving between 80 and 90% with eight pairs of constituent layers. To further enhance the performance of these structures, additional Au layers were added at the bottom of the structure with Ti precoating applied to improve the adhesivity of the Au to the semiconductor substrate. The optimal range of Ti layer thickness resulting in the improvement of the maximum reflectivity was determined to be in between 5 and 15 nm.

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The influence of quantum well and barrier thicknesses on photoluminescence spectra of InGaAs/AlInAs superlattices grown by LP-MOVPE

Łozińska Adriana, Badura Mikołaj, Bielak Katarzyna, Ściana Beata, Tłaczała Marek

Optica Applicata

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2020

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Vol. 50, nr 2

251--256

EN

In the presented work, the influence of the quantum well and barrier thicknesses on optical characteristics of InGaAs/AlInAs superlattices was reported. Six different structures of In0.53Ga0.47As/Al0.48In0.52As superlattices lattice-matched to InP were grown by low pressure metal organic vapour phase epitaxy (LP-MOVPE). Optical properties of the obtained structures were examined by means of photoluminescence spectroscopy. This technique allows quick, simple and non-destructive measurements of radiative optical transitions in different semiconductor heterostructures.The analysis of recorded photoluminescence spectra revealed the influence of the quantum well and barrier thicknesses on the emission line energy.

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Photoluminescence and Raman spectroscopies as an optical approach of stress determining in MOVPE grown quantum cascade laser structures

Łozińska Adriana, Badura Mikołaj, Jadczak Joanna, Bielak Katarzyna, Ściana Beata

Optica Applicata

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2020

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Vol. 50, nr 2

289--299

EN

In the presented work, an optical approach of stress determining in metalorganic vapor phase epitaxy (MOVPE) grown quantum cascade laser (QCL) structures was reported. In the case of such sophisticated structures containing hundreds of thin layers, it is important to minimize the stress generated in the QCL core. Techniques enabling determination of stress in such thin layers as those described in the article are photoluminescence and Raman spectroscopies. Based on Raman shift or changes in photoluminescence signal, it is possible to analyze stress occurring in the structure.