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Peculiarities of neutron interaction with boron containing semiconductors

Didyk A. Y., Hofman A., Szteke W., Hajewska E., Vlasukova L. A.

Nukleonika

2009

Vol. 54, No. 3

163-168

Abstract. The results of point defect creation calculation in B4C, BN and BP semiconductor single crystals irradiated in the fast neutron reactor IBR-2 are presented. It has been shown that during the thermal neutron interaction with light isotope boron atoms (10B) the damage creation by means of fission nuclear reaction fragments (alfa-particles and 7Li recoil nuclei) exceeds the damage created by fast neutrons (En greater than 0.1 MeV) by more than two orders of value. It has been concluded that such irradiation can create a well developed radiation defect structure in boron-containing crystals with nearly homogeneous vacancy depth distribution. This may be used in technological applications for more effective diffusion of impurities implanted at low energies or deposited onto the semiconductor surface. The developed homogeneous vacancy structure is very suitable for the radiation enhanced diffusion of electrically charged or neutral impurities from the surface into the technological depth of semiconductor devices under post irradiation treatment.

Model przewodności skokowej i jego weryfikacja dla nanostruktur wytwarzanych technikami jonowymi

Żukowski P., Kołtunowicz T., Partyka J., Węgierek P., Kolasik M., Larkin A., Fedotova J., Fedotov A., Komarov F., Vlasukova L. A.

Przegląd Elektrotechniczny

2008

R. 84, nr 3

247-249

W pracy przedstawiono model przewodności skokowego przenoszenia ładunków, zlokalizowanych w studniach potencjału, w przypadku przemiennego pola elektrycznego.

The paper presents a conductivity model of a hopping transfer of charges located in potential wells in the case of an alternating current field.

Damage distributions in GaAs single crystal irradiated with 84Kr (394 MeV), 209Bi (710 MeV) and 238U (1300 MeV) swift ions

Didyk A. Y., Komarov F. F., Vlasukova L. A., Gracheva E. A., Hofman A., Yuvchenko V. N., Wiśniewski R., Wilczyńska T.

Nukleonika

2008

Vol. 53, No. 2

77-82

We are presenting a study of damage distribution in GaAs irradiated with 84Kr ions of energy EKr = 394 MeV up to the fluence of 5 × 1012 ion/cm-2. The distribution of damage along the projected range of 84Kr ions in GaAs was investigated using selective chemical etching of a single crystal cleaved perpendicularly to the irradiated surface. The damage zone located under the Bragg peak of 84Kr ions was observed. Explanation of the observed effects based on possible processes of channeling of knocked target atoms (Ga and As) is proposed.