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EN
Recent advances in THz detection with the use of CMOS technology have shown that this option has the potential to be a leading method of producing low-cost THz sensors with integrated readout systems. This review paper, based on authors’ years of experience, presents strengths and weaknesses of this solution. The article gives examples of some hints, regarding radiation coupling and readout systems. It shows that silicon CMOS technology is well adapted to the production of inexpensive imaging systems for sub-THz frequencies. As an example paper presents the demonstrator of a multipixel Si-CMOS THz spectroscopic system allowing for chemical identification of lactose. The THz detectors embedded in this system were manufactured using the CMOS process.
2
Content available remote AlGaN/GaN HEMT’s photoresponse to high intensity THz radiation
EN
We report on the photoresponse dependence on the terahertz radiation intensity in AlGaN/GaN HEMTs. We show that the AlGaN/GaN HEMT can be used as a THz detector in CW and in pulsed regime up to radiation intensity of several kW/cm². The dynamic range in the pulsed regime of detection can be more than 2 decades. We observed that the photoresponse of the HEMT could have a compound composition if two independent parts of the transistor are involved in the detection process; this result indicates that a more simple one channel device may be preferable on the detection purpose.
EN
Resonant frequencies of the two-dimensional plasma in FETs reach the THz range for nanometer transistor channels. Non-linear properties of the electron plasma are responsible for detection of THz radiation with FETs. Resonant excitation of plasma waves with sub-THz and THz radiation was demonstrated for short gate transistors at cryogenic temperatures. At room temperature, plasma oscillations are usually over-damped, but the FETs can still operate as efficient broadband THz detectors. The paper presents the main theoretical and experimental results on detection with FETs stressing their possible THz imaging applications. We discuss advantages and disadvantages of application of III-V GaAs and GaN HEMTs and silicon MOSFETs.
EN
In the case of capillary electrophoresis the limits of determination XQ cannot be defined according to the accepted definition. The paper presents the approach applied and recommended by EURACHEM, relying on the approximation of the graph representing the relationships between the relative standard deviation RSD (%) and the concentration of given indicator in the spiked sample. Consistent with this approach the limit of determination is the lowest concentration of analyte in the sample which can be exactly quantified with precision, determined by the level of RSD (%).
PL
W przypadku elektroforezy kapilarnej nie można wyznaczyć granic oznaczalności XQ według ogólnie przyjętych definicji. Artykuł prezentuje podejście zalecane przez EURACHEM, opierające się na aproksymacji krzywej przedstawiającej zależność współczynnika zmienności RSD (%) od stężenia danego wskaźnika w próbce znaczonej. Zgodnie z tym podejściem granica oznaczalności, to najmniejsze stężenie analitu w próbce, które może być dokładnie oznaczone z precyzją określoną przez współczynnik zmienności RSD (%).
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